Vishay P-Channel MOSFET, 9.6 A, 30 V, Enhancement Mode, 8-Pin PowerPAK 1212 Package SI7121DN-T1-GE3

Vishay SI7121DN-T1-GE3 P-Channel MOSFET is a specialized enhancement mode transistor designed for power switching applications within electronic and electrical systems. This discrete semiconductor operates at a maximum drain current of 9.6 A and withstands up to 30 V drain-source voltage, housed in a compact 8-pin PowerPAK 1212 surface mount package.

The device features a low maximum drain-source resistance of 26 milliohms, contributing to minimal power loss and enhanced energy efficiency during operation. It can dissipate up to 27.8 W of power, supporting demanding industrial and commercial uses with high thermal reliability.

Operating across a wide temperature range of -50°C to 150°C, this MOSFET is well-suited for harsh environments found in manufacturing, HVAC systems, and embedded control units. Its physical dimensions (3.15 mm x 3.15 mm x 1.07 mm) allow integration into space-constrained PCB layouts without sacrificing performance.

The typical gate charge of 33 nanocoulombs ensures swift switching capabilities, critical for high-frequency applications. Its gate-source voltage tolerance of ±25 V guards against transient voltage spikes, enhancing device longevity. The forward voltage drop of 1.2 V aids in reducing conduction losses under load.

Widely applicable in industrial machinery controls, power management modules, and laboratory electronic devices, this MOSFET's robust design supports reliable, efficient switching. It is sourced from Vishay, a recognized brand known for quality semiconductor components.

Designed for enhancement mode operation ensuring efficient switching. Maximum drain-source resistance is 26 milliohms for low power loss. Supports maximum power dissipation of 27.8 W for reliable thermal performance. Wide operating temperature range from -50°C to 150°C suitable for industrial applications.

Compact dimensions of 3.15 mm length and width with 1.07 mm height for PCB space efficiency. Typical gate charge of 33 nanocoulombs ensures fast switching speeds. Maximum gate-source voltage rating of ±25 V prevents gate damage under surges.

Package designed for surface mount technology with 8-pin configuration. Forward voltage of 1.2 V optimizes conduction efficiency. Manufactured in China and ideally suited for power management in electronic circuits. Explore the high-quality MOSFET range from Vishay for your specialized semiconductor needs on EnvMart.