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Vishay P-Channel MOSFET 4.3 A, 20 V Enhancement Mode, 4-Pin MICRO FOOT Package SI8489EDB-T2-E1
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 0.268mm |
| Length | 1mm |
| Model | SI8489EDB-T2-E1 |
| Width | 1mm |
| Mount Type | Surface |
| Series | Si8489EDB |
| Maximum Operating Temperature | 150°C |
| Package Type | MICRO FOOT |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 4.3A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 82mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.8W |
| Typical Gate Charge Qg @ Vgs | 17.5nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -0.8V |
Key Features
- Enhancement mode device ensuring efficient switching performance.
- Maximum drain-source resistance of 82 milliohms for low conduction losses.
- Maximum power dissipation rated at 1.8 watts.
- Operating temperature range from -55 to 150 degrees Celsius.
- Typical gate charge of 17.5 nanocoulombs at gate-source voltage.
- Gate-source voltage tolerance from -12 to +12 volts.
- Surface mount design for automated insertion and reliable PCB mounting.
- Originates from China with no automotive certifications.
Product Description
The Vishay SI8489EDB-T2-E1 is a type P-Channel MOSFET semiconductor device designed for switching and amplification in electronic circuits. Operating with a maximum continuous drain current of 4.3 amperes and a maximum drain-source voltage of 20 volts, this enhancement mode MOSFET provides effective control in low voltage applications.
This device comes in a compact 4-pin MICRO FOOT surface mount package, measuring approximately 1 mm in length and width, with a height of 0.268 mm, enabling space-saving PCB designs and integration into dense electronics assemblies. The maximum drain-source resistance of 82 milliohms ensures minimal conduction losses, improving efficiency in power delivery.
The MOSFET supports a typical gate charge of 17.5 nanocoulombs at the gate-source voltage of 12 volts, suitable for fast switching applications. Its gate-source voltage range extends from -12 volts to +12 volts, offering robust control capabilities. The maximum power dissipation rating is 1.8 watts, which supports medium-power operation within the device’s thermal limits.
Designed to operate reliably in harsh conditions, the device functions across a temperature range from -55 degrees Celsius to 150 degrees Celsius. This makes it suitable for diverse environments including industrial electronics, power management, and consumer applications.
The SI8489EDB-T2-E1 MOSFET from Vishay is manufactured in China and does not carry specific automotive industry standards. It is ideal for laboratory, industrial, and commercial electronic component usage where efficient, reliable P-Channel MOSFETs are required.
Enhancement mode for efficient switching. Compact 4-pin surface mount MICRO FOOT package. Operates within wide temperature range from -55°C to 150°C. Low drain-source resistance for minimal power loss. Suitable for industrial and commercial electronics.
Medium power dissipation of 1.8 watts. Typical gate charge supports fast switching. Robust gate-source voltage tolerance. Made in China with consistent quality standards. Explore more high-quality MOSFETs and power semiconductor products at EnvMart's Electronics & Electricals category to meet your industrial and manufacturing needs.
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Frequently Asked Questions
The maximum continuous drain current for the SI8489EDB-T2-E1 is 4.3 amperes.
This model has a maximum drain-source voltage rating of 20 volts.
The maximum power dissipation rated for this MOSFET is 1.8 watts.
The typical gate charge is 17.5 nanocoulombs at a gate-source voltage of 12 volts.
The MICRO FOOT package measures approximately 1 mm in length and width, with a height of 0.268 mm.
It operates within a temperature range from -55 degrees Celsius to 150 degrees Celsius.
The maximum gate-source voltage tolerance for this model is from -12 volts to +12 volts.
The maximum drain-source resistance is 82 milliohms, ensuring low conduction losses.
This device uses a surface mount design for automated insertion and reliable PCB mounting.
This MOSFET is suitable for industrial electronics, power management, and consumer applications.
The SI8489EDB-T2-E1 has a pin count of 4.
The SI8489EDB-T2-E1 is manufactured in China.
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