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Vishay P-Channel MOSFET, 9.9 A Drain Current, 30 V Drain Source Voltage, Enhancement Mode, 8-Pin PowerPAK SI5419DU-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 0.85mm |
| Length | 3.08mm |
| Model | SI5419DU-T1-GE3 |
| Width | 1.98mm |
| Mount Type | Surface |
| Series | Si5419DU |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK ChipFET |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 9.9A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 33mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 31W |
| Typical Gate Charge Qg @ Vgs | 30nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -0.85V |
Key Features
- This device is designed for surface mount applications with a compact PowerPAK ChipFET package.
- Features enhancement mode operation providing excellent switching performance.
- Maximum continuous drain current is 9.9 amperes ensuring robust power handling.
- Capable of withstanding a maximum drain-source voltage of 30 volts.
- Low maximum drain-source resistance of 33 milliohms ensures efficient power use.
- Typical gate charge is 30 nanocoulombs at gate-source voltage, optimizing switching speed.
- Operates reliably over a wide temperature range from -55°C to 150°C.
- Forward voltage drop is -0.85 volts for efficient conduction.
Product Description
The Vishay SI5419DU-T1-GE3 is a high-performance P-Channel MOSFET designed for applications requiring efficient power switching and amplification. This MOSFET supports a maximum continuous drain current of 9.9 amperes and a drain-source voltage rating of 30 volts, making it suitable for medium power electronic circuits.
It features enhancement mode operation, which allows it to operate efficiently with low gate charge and low on-resistance, reducing power loss in switching devices. Housed in a compact 8-pin PowerPAK ChipFET surface-mount package, the device is optimized for automated assembly and effective heat dissipation in dense electronic modules.
Technical attributes include a maximum power dissipation rating of 31 watts and gate voltage tolerance ranging from -20 to +20 volts, allowing robust gate drive conditions. The device operates reliably over an extensive environmental range from -55°C to 150°C, suitable for demanding industrial, automotive, and electronic manufacturing environments.
Applications encompass industrial power management circuits, consumer electronics, automotive electronics, and other semiconductor-based power switching solutions. This device is designed for surface mount applications with a compact PowerPAK ChipFET package.
Features enhancement mode operation providing excellent switching performance. Maximum continuous drain current is 9.9 amperes ensuring robust power handling. Capable of withstanding a maximum drain-source voltage of 30 volts.
Low maximum drain-source resistance of 33 milliohms ensures efficient power use. Typical gate charge is 30 nanocoulombs at gate-source voltage, optimizing switching speed. Operates reliably over a wide temperature range from -55°C to 150°C.
Forward voltage drop is -0.85 volts for efficient conduction. Pin count of 8 supports flexible circuit integration and thermal management. Manufactured in China with precise quality control standards ensuring reliability.
Explore Vishay semiconductor products and discrete MOSFET devices on EnvMart for reliable and high-quality electronic components suitable for varied industrial applications.
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Frequently Asked Questions
The maximum continuous drain current is 9.9 amperes, allowing for robust power handling in various applications.
This model has a maximum drain-source voltage rating of 30 volts, making it suitable for medium power electronic circuits.
The typical gate charge is 30 nanocoulombs at gate-source voltage, which optimizes switching speed.
The maximum power dissipation rating for this device is 31 watts, ensuring it can handle significant power without overheating.
The dimensions of the package are 3.08 mm in length, 1.98 mm in width, and 0.85 mm in height.
The maximum drain-source resistance is 33 milliohms, which contributes to efficient power use.
It operates reliably over a temperature range from -55°C to 150°C, suitable for demanding environments.
The forward voltage drop is -0.85 volts, which aids in efficient conduction.
This model supports surface mounting, making it suitable for automated assembly processes.
The gate voltage tolerance ranges from -20 to +20 volts, allowing for robust gate drive conditions.
It is suitable for applications in industrial power management circuits, consumer electronics, and automotive electronics.
This MOSFET has a pin count of 8, which supports flexible circuit integration and thermal management.
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