Vishay N-Channel Power MOSFET 960 mA, 200 V, Enhancement Mode, 4-Pin SOT-223 IRFL210TRPBF

Vishay IRFL210TRPBF is a high-voltage N-Channel Power MOSFET designed for demanding electronic systems requiring efficient power switching. This enhancement mode transistor operates with a maximum continuous drain current of 960 mA and a maximum drain-source voltage rating of 200 V. The device is housed in a compact 4-pin SOT-223 surface-mount package suitable for standard solder reflow assembly.

With a low maximum drain-source resistance (Rds(on)) of 1.5 Ω, this MOSFET minimizes conduction losses in low-current circuits, supporting efficient energy management. The typical gate charge of 8.2 nC allows for moderate switching speeds, making it ideal for power-supply secondary-side switching and motor-control signal applications.

Designed for robust industrial usage, the device withstands extreme thermal conditions from -55 °C to 150 °C, ensuring reliability in harsh environments. The maximum power dissipation rating of 3.1 W informs proper heat sinking and thermal management during use.

This MOSFET supports a maximum gate-source voltage of ±20 V, providing robust gate drive margins for control circuits. Compliant with RoHS standards, it guarantees restriction of hazardous substances during manufacturing, aligning with environmental regulations.

Applications include power supply switching, small motor control, LED drivers, battery management low-power switching, and industrial control interfaces. The SOT-223 package facilitates easy PCB integration for compact circuitry designs.

The compact dimensions are 6.7 mm length, 3.7 mm width, and 1.8 mm height, suitable for space-constrained electronic assemblies. The component is not certified for automotive specific standards.

Choose Vishay IRFL210TRPBF for reliable, efficient, and compact N-channel MOSFET switching in power electronics, with proven industrial temperature and power handling capabilities.

Explore more components in the Power MOSFET category at EnvMart for your electronic and industrial application needs. The MOSFET supports a maximum continuous drain current of 960 mA. It features a maximum drain-source voltage rating of 200 V suitable for high-voltage switching.

The component has an Rds(on) resistance of 1.5 Ω to reduce conduction losses. Gate charge is typically 8.2 nC enabling moderate switching speeds. Maximum power dissipation is rated at 3.1 W ensuring efficient thermal handling.

Operates reliably from -55 °C up to 150 °C industrial temperature range. The package type is SOT-223 with four pins for surface mounting on PCBs. Compatible with RoHS compliance standards for restricted substances.