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Vishay P-Channel Enhancement MOSFET, 6 A, 60 V, 3-Pin TO-220 Package IRFI9Z24GPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 16.12mm |
| Length | 10.63mm |
| Model | IRFI9Z24GPBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | IRFI |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6A |
| Maximum Drain Source Voltage Vds | 60V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 37W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -6.3V |
Key Features
- Supports a maximum continuous drain current of 6 amperes.
- Operates with a maximum drain-source voltage of 60 volts.
- Features a 3-pin configuration suitable for through-hole mounting.
- Low maximum drain-source resistance of 280 milliohms improves efficiency.
- Capable of operating in temperatures from -55°C up to 175°C.
- Maximum power dissipation rated at 37 watts.
- Typical gate charge of 19 nanocoulombs ensures fast switching.
- Designed with an enhancement channel mode for improved performance.
Product Description
The Vishay IRFI9Z24GPBF is a P-Channel MOSFET designed to handle up to 6 A continuous drain current and a maximum drain-source voltage of 60 V. Packaged in a TO-220 3-pin format, this device is suited for a variety of electronic and power management applications requiring efficient switching and control.
This MOSFET features a low on-state drain-source resistance of 280 milliohms which contributes to low conduction losses and improved power efficiency in circuits. The typical gate charge of 19 nanocoulombs facilitates quick switching transitions, ideal for high-performance switching operations.
Capable of enduring temperatures from -55°C to an operating maximum of 175°C, the IRFI9Z24GPBF offers reliable performance in diverse environmental conditions. Rated for a maximum power dissipation of 37 watts, it is well-suited for industrial, laboratory, and commercial electronics use cases.
The 3-pin through-hole mounting package type and its compact dimensions (16.12 mm height, 10.63 mm length, and 4.83 mm width) make integration in PCB designs straightforward and robust. This product is manufactured to meet high-quality standards in China.
Supports maximum 6 amperes continuous current. Operates at up to 60 volts drain-source voltage. Low drain-source resistance enhances efficiency. Wide operating temperature range ensures durability. High power dissipation capability suits demanding environments.
Quick switching enabled by low gate charge.
This MOSFET is an ideal choice in electronics, power control, and semi-conductor applications requiring a reliable P-Channel device with TO-220 packaging. Explore the full collection of MOSFETs and related semiconductors at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 6 amperes.
It operates with a maximum drain-source voltage of 60 volts.
This model features a 3-pin configuration suitable for through-hole mounting.
The maximum power dissipation rated for this unit is 37 watts.
It can operate in temperatures ranging from -55°C to 175°C.
The typical gate charge is 19 nanocoulombs, which ensures fast switching.
It has a low maximum drain-source resistance of 280 milliohms.
The dimensions of the TO-220 package are 16.12 mm in height, 10.63 mm in length, and 4.83 mm in width.
This model features a P-channel type channel.
The maximum gate-source voltage for this MOSFET is -20 to +20 volts.
This product is manufactured in China.
It is well-suited for various electronic and power management applications requiring efficient switching and control.
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