Vishay P-Channel MOSFET 690 mA 100 V Enhancement 4-Pin SOT-223 IRFL9110TRPBF

Vishay IRFL9110TRPBF is a P-Channel Enhancement Mode MOSFET designed for switching and amplification in electronic circuits. With a maximum continuous drain current of 690 mA and a drain-source voltage rating of 100 V, it provides reliable performance in power management and control applications.

The device comes in a compact surface mount 4-pin SOT-223 package, measuring 6.7 mm in length, 3.7 mm width, and 1.8 mm height, ideal for space-constrained PCB layouts. The MOSFET features a low maximum drain-source resistance (Rds) of 1.2Ω, ensuring efficient conduction with reduced power loss.

Operational specifications include a typical gate charge of 8.7 nC at gate-source voltage, allowing for fast switching speeds. It operates safely within a temperature range from -55°C to 150°C, suitable for industrial and commercial electronics under diverse conditions. The maximum power dissipation rating of 3.1 W guarantees robust thermal handling capacity.

This Vishay MOSFET is suitable for applications in power supply circuits, load switching, DC-DC converters, and similar electronic devices requiring reliable switching components. It does not carry automotive certifications but is engineered to industry standards for discrete semiconductors.

Type P channel MOSFET with enhancement mode operation. Maximum continuous drain current of 690 mA ensures efficient control. Maximum drain-source voltage rating of 100 V for demanding applications. Low maximum drain-source resistance of 1.2Ω supports low power loss.

Maximum power dissipation of 3.1 W for reliable thermal performance. Typical gate charge of 8.7 nC at Vgs enables fast switching. Operating temperature range from -55°C to 150°C for harsh environments. Compact SOT-223 surface mount package.

Package dimensions: 6.7 mm x 3.7 mm x 1.8 mm. Ideal for power management and switching applications.