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Vishay P-Channel MOSFET, 6.1 A Continuous Drain Current, 50 V Drain Source Voltage, TO-220 Package, Enhancement IRF9Z20PBF

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 15.49mm
Length 10.51mm
Model IRF9Z20PBF
Width 4.65mm
Mount Type Through Hole
Series IRF9Z20
Maximum Operating Temperature 150°C
Package Type TO-220
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 6.1A
Maximum Drain Source Voltage Vds 50V
Maximum Drain Source Resistance Rds 280mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 40W
Typical Gate Charge Qg @ Vgs 17nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf -6.3V

Key Features

  • Designed for through-hole mounting with 3 pins in TO-220 package.
  • Enhancement type P-Channel MOSFET suitable for switching applications.
  • Maximum power dissipation of 40 W for robust thermal performance.
  • Gate charge of 17 nC typical at Vgs enables fast switching.
  • Operating temperature ranges from -55°C to 150°C.
  • Drain-source resistance of 280 mΩ minimizes conduction losses.
  • Maximum gate-source voltage of ±20 V ensures reliable operation.
  • Forward voltage of -6.3 V supports efficient conduction.

Product Description

Vishay IRF9Z20PBF is a P-Channel MOSFET transistor designed for power switching and amplification in electronic circuits. It supports a maximum continuous drain current of 6.1 A and a drain-source voltage rating of 50 V, making it suitable for mid-power applications requiring reliable performance.

This MOSFET features an enhancement mode channel, with a low drain-source resistance of 280 mΩ to minimize power losses during conduction. Packaged in a TO-220 through-hole form factor with 3 pins, it offers easy mounting and thermal management with a maximum power dissipation of 40 W.

The device operates safely within a temperature range from -55°C to 150°C, suitable for industrial, consumer electronics, and automotive environments. It includes a typical gate charge of 17 nC at specified gate-source voltage, enabling efficient switching performance. The maximum gate-source voltage rating is ±20 V.

Its compact size with dimensions 15.49 mm height, 10.51 mm length, and 4.65 mm width helps integrate this MOSFET into space-constrained designs. The forward voltage of -6.3 V ensures current flow with minimal voltage drop.

Applications span electronic components, power management, semiconductor modules, and discrete circuit assemblies. This Vishay MOSFET is manufactured in China maintaining high-quality standards.

Designed for through-hole mounting with 3 pins in TO-220 package. Enhancement type P-Channel MOSFET suitable for switching applications. Maximum power dissipation of 40 W for robust thermal performance. Gate charge of 17 nC typical at Vgs enables fast switching.

Operating temperature ranges from -55°C to 150°C. Drain-source resistance of 280 mΩ minimizes conduction losses. Maximum gate-source voltage of ±20 V ensures reliable operation. Compact dimensions: height 15.49 mm, length 10.51 mm, width 4.65 mm.

Forward voltage of -6.3 V supports efficient conduction. Manufactured in China under Vishay Semiconductor standards. Explore EnvMart's portfolio of high-quality MOSFETs and discrete semiconductors for your next electronic design project.

Vishay P-Channel MOSFET, 6.1 A Continuous Drain Current, 50 V Drain Source Voltage, TO-220 Package, Enhancement IRF9Z20PBF
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Frequently Asked Questions

The maximum continuous drain current for this model is 6.1 A.

The drain-source voltage rating is 50 V.

It has dimensions of 15.49 mm in height, 10.51 mm in length, and 4.65 mm in width.

The maximum power dissipation for this model is 40 W.

The typical gate charge is 17 nC at the specified gate-source voltage.

The maximum gate-source voltage is ±20 V.

The operating temperature range is from -55°C to 150°C.

It is designed for through-hole mounting with 3 pins in a TO-220 package.

The drain-source resistance is 280 mΩ.

This model is suitable for power switching and amplification in electronic circuits, including industrial, consumer electronics, and automotive environments.

The forward voltage is -6.3 V, which supports efficient conduction.

This MOSFET is manufactured in China.

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