$0.82
$0.79
Tax included
World's First Climate Tech Platform | Free Delivery in India | Global Shipping

Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries

Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries

If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon

Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 15.49mm |
| Length | 10.51mm |
| Model | IRF9Z20PBF |
| Width | 4.65mm |
| Mount Type | Through Hole |
| Series | IRF9Z20 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 6.1A |
| Maximum Drain Source Voltage Vds | 50V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 40W |
| Typical Gate Charge Qg @ Vgs | 17nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -6.3V |
Vishay IRF9Z20PBF is a P-Channel MOSFET transistor designed for power switching and amplification in electronic circuits. It supports a maximum continuous drain current of 6.1 A and a drain-source voltage rating of 50 V, making it suitable for mid-power applications requiring reliable performance.
This MOSFET features an enhancement mode channel, with a low drain-source resistance of 280 mΩ to minimize power losses during conduction. Packaged in a TO-220 through-hole form factor with 3 pins, it offers easy mounting and thermal management with a maximum power dissipation of 40 W.
The device operates safely within a temperature range from -55°C to 150°C, suitable for industrial, consumer electronics, and automotive environments. It includes a typical gate charge of 17 nC at specified gate-source voltage, enabling efficient switching performance. The maximum gate-source voltage rating is ±20 V.
Its compact size with dimensions 15.49 mm height, 10.51 mm length, and 4.65 mm width helps integrate this MOSFET into space-constrained designs. The forward voltage of -6.3 V ensures current flow with minimal voltage drop.
Applications span electronic components, power management, semiconductor modules, and discrete circuit assemblies. This Vishay MOSFET is manufactured in China maintaining high-quality standards.
Designed for through-hole mounting with 3 pins in TO-220 package. Enhancement type P-Channel MOSFET suitable for switching applications. Maximum power dissipation of 40 W for robust thermal performance. Gate charge of 17 nC typical at Vgs enables fast switching.
Operating temperature ranges from -55°C to 150°C. Drain-source resistance of 280 mΩ minimizes conduction losses. Maximum gate-source voltage of ±20 V ensures reliable operation. Compact dimensions: height 15.49 mm, length 10.51 mm, width 4.65 mm.
Forward voltage of -6.3 V supports efficient conduction. Manufactured in China under Vishay Semiconductor standards. Explore EnvMart's portfolio of high-quality MOSFETs and discrete semiconductors for your next electronic design project.
Review sent
Your review cannot be sent
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent