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Vishay P-Channel MOSFET TO-263 Package 6.8 A 200 V Enhancement Mode 3-Pin IRF9640STRLPBF

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Vishay P-Channel MOSFET TO-263 Package 6.8 A 200 V Enhancement Mode 3-Pin IRF9640STRLPBF

Name: Vishay P-Channel MOSFET TO-263 Package 6.8 A 200 V Enhancement Mode 3-Pin IRF9640STRLPBF
Brand: Vishay
SKU: 376325
Price: 1.41 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	4.83mm
Length	10.67mm
Model	IRF9640STRLPBF
Width	9.65mm
Mount Type	Surface
Series	IRF9640S
Maximum Operating Temperature	150°C
Package Type	TO-263
Minimum Operating Temperature	-55°C
Pin Count	3
Channel Type	Type P
Maximum Continuous Drain Current Id	6.8A
Maximum Drain Source Voltage Vds	200V
Maximum Drain Source Resistance Rds	500mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	125W
Typical Gate Charge Qg @ Vgs	44nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	-5V
P-Channel MOSFET, 6.8 A, 100 V, 3-Pin D2PAK Infineon IRF9520NSPBFBrand	Infineon

Key Features

This component features a TO-263 surface mount package suitable for compact electronic circuits.
The maximum power dissipation is rated at 125 W ensuring robust performance under thermal stresses.
The maximum gate-source voltage ranges from -20 V to +20 V, allowing versatile gate drive options.
Typical gate charge at Vgs is 44 nC, facilitating efficient switching behavior.
It operates efficiently from -55°C up to 150°C, making it applicable for diverse environments.
Low maximum drain-source resistance (500 mΩ) ensures minimal conduction losses.

Product Description

Vishay IRF9640STRLPBF is a P-Channel MOSFET designed for discrete semiconductor applications, featuring a TO-263 surface mount package. Rated for a maximum continuous drain current of 6.8 A and drain-source voltage of 200 V, this enhancement mode transistor is ideal for power management and switching circuits in electronic devices.

Its robust maximum power dissipation of 125 W supports thermal reliability in demanding conditions. The MOSFET's gate characteristics include a typical gate charge of 44 nC and an operating gate-source voltage range from -20 V to +20 V, enabling efficient gate control and switching performance.

The device operates reliably over a wide temperature range from -55°C to 150°C, suitable for industrial, automotive, and commercial electronics environments. Its low maximum drain-source resistance (500 mΩ) enhances efficiency by minimizing conduction losses.

The compact TO-263 package dimensions (length 10.67 mm, width 9.65 mm, height 4.83 mm) facilitate space-saving PCB designs with surface mount mounting. This MOSFET is widely used in electronic power supply circuits, motor controls, and switching devices for industrial and consumer applications.

This component features a TO-263 surface mount package suitable for compact electronic circuits. The maximum power dissipation is rated at 125 W ensuring robust performance under thermal stresses. The maximum gate-source voltage ranges from -20 V to +20 V, allowing versatile gate drive options.

Typical gate charge at Vgs is 44 nC, facilitating efficient switching behavior. It operates efficiently from -55°C up to 150°C, making it applicable for diverse environments. Low maximum drain-source resistance (500 mΩ) ensures minimal conduction losses.

Compact dimensions: length 10.67 mm, width 9.65 mm, height 4.83 mm enhance PCB layout flexibility. Explore Vishay products and similar MOSFETs in the Electronics & Electricals category at EnvMart for your design and manufacturing needs.