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Vishay P-Channel MOSFET 1.9 A 200 V Enhancement 3-Pin TO-220 IRFI9620GPBF
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 16.12mm |
| Length | 10.63mm |
| Model | IRFI9620GPBF |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | IRFI |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.9A |
| Maximum Drain Source Voltage Vds | 200V |
| Maximum Drain Source Resistance Rds | 1.5Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 30W |
| Typical Gate Charge Qg @ Vgs | 15nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -6.3V |
Key Features
- Type P channel MOSFET designed for enhancement mode operation.
- Maximum power dissipation rating of 30 W for reliable performance.
- Through hole mount type with 3 pins facilitates easy PCB integration.
- Operating temperature range from -55°C to 150°C ensures robust usage conditions.
- Low maximum drain-source resistance of 1.5 Ω reduces conduction losses.
- Typical gate charge of 15 nC at the specified gate voltage enhances switching efficiency.
- Maximum gate-source voltage tolerance of -20 V to +20 V supports flexible control signals.
- Forward voltage drop of -6.3 V ensures efficient conduction.
Product Description
Vishay IRFI9620GPBF is a robust P-Channel MOSFET transistor designed for discrete semiconductor applications in electronics. It features a maximum continuous drain current of 1.9 A and a maximum drain-source voltage rating of 200 V, making it suitable for power management and control in industrial, commercial, and laboratory electronic circuits.
This enhancement mode MOSFET comes in a TO-220 package with through-hole mounting, comprising 3 pins for secure circuit integration. It offers a maximum power dissipation of 30 W, allowing it to handle moderate power loads efficiently while maintaining thermal stability.
Operating across a temperature span from -55°C up to 150°C, the IRFI9620GPBF can perform reliably in harsh environments. The device has a typical gate charge of 15 nC at specified gate voltages, contributing to faster switching performance. It supports a gate-source voltage range of -20 V to +20 V, enabling flexible control in switching and amplification applications.
The MOSFET features a low maximum drain-source resistance of 1.5 Ω, minimizing conduction losses for improved energy efficiency. Its compact physical dimensions of height 16.12 mm, length 10.63 mm, and width 4.83 mm make it suitable for space-constrained PCB layouts.
Type P channel MOSFET with enhancement mode operation. 1.9 A maximum continuous drain current and 200 V drain-source voltage. TO-220 package with through-hole mount and 3 pins. Power dissipation of 30 W for stable operation.
Operating temperature range from -55°C to 150°C. Gate charge typical value 15 nC at specified gate voltage. Gate-source voltage maximum ±20 V tolerance. Low 1.5 Ω maximum drain-source resistance. Forward voltage of -6.3 V ensuring efficient conduction.
Compact size: 16.12 mm height, 10.63 mm length, 4.83 mm width.
This P-Channel MOSFET is ideal for applications in industrial automation, power electronics, and electronic device manufacturing. It offers dependable performance for controlling high voltage and current circuits in a variety of electronic designs.
For reliable procurement of quality MOSFETs, explore more Vishay semiconductor components in the EnvMart catalog for seamless integration into your electronic projects and products.
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Frequently Asked Questions
The maximum continuous drain current for the IRFI9620GPBF is 1.9 A.
This model has a maximum drain-source voltage rating of 200 V.
It has a maximum power dissipation rating of 30 W.
The operating temperature range is from -55°C to 150°C.
The typical gate charge at the specified gate voltage is 15 nC.
It supports a maximum gate-source voltage tolerance of -20 V to +20 V.
The maximum drain-source resistance is 1.5 Ω.
The dimensions of the TO-220 package are 16.12 mm in height, 10.63 mm in length, and 4.83 mm in width.
This MOSFET features a 3-pin configuration for through-hole mounting.
The IRFI9620GPBF is a P-Channel MOSFET designed for enhancement mode operation.
The forward voltage drop is -6.3 V, ensuring efficient conduction.
This model is suitable for applications in industrial automation, power electronics, and electronic device manufacturing.
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