Vishay P-Channel MOSFET, 6.8 A, 200 V Enhancement Mode, 3-Pin TO-263 Surface Mount IRF9640STRLPBF

Vishay IRF9640STRLPBF is a high-performance P-Channel MOSFET transistor designed for reliable operation in electronic and power management circuits. It features an enhancement mode channel with a continuous drain current rating of 6.8 A and a maximum drain-source voltage of 200 V.

The TO-263 3-pin surface mount package provides a compact footprint ideal for modern PCB layouts, offering efficient thermal management and easy mounting. The device supports a maximum power dissipation of 125 W, making it suitable for demanding applications in industrial, automotive, and power electronics fields.

Its low Rds(on) of 500 mΩ contributes to reduced power loss and enhanced switching efficiency. The typical gate charge of 44 nC ensures fast switching operations with minimal energy consumption. This MOSFET device is specified to operate reliably over a broad temperature range from -55°C to +150°C, allowing use in harsh environments.

The maximum gate-source voltage tolerance ranges between -20 V and +20 V, offering flexibility in gate drive voltage design. The forward voltage drop is rated at -5 V which aids in reducing losses during conduction.

Physical package dimensions of 10.67 mm length, 9.65 mm width, and 4.83 mm height enable easy integration into compact electronic designs. This P-Channel MOSFET is widely applicable in power management circuits for electronic devices, laboratory equipment, industrial automation, and automotive electronics.

Set your designs apart with the reliable, efficient Vishay IRF9640STRLPBF MOSFET designed for advanced semiconductor performance and durability in industry-grade scenarios. Explore a wide range of MOSFET and semiconductor components within the Electronics & Electricals category on EnvMart to find the perfect match for your technical requirements.

This MOSFET operates with a maximum power dissipation of 125 W suitable for high-performance applications. It provides a low drain-source resistance of 500 mΩ to minimize conduction losses. Designed for operation over a wide temperature range from -55°C to 150°C for industrial reliability.

The device has a typical gate charge of 44 nC ensuring efficient switching performance. Maximum gate-source voltage tolerance is between -20 V and +20 V, supporting flexible gate drive conditions. Forward voltage drop is rated at -5 V, contributing to overall efficiency.

Physical dimensions of 10.67 mm length, 9.65 mm width, and 4.83 mm height facilitate easy PCB integration. The component uses a 3-pin TO-263 package optimized for surface mount technology (SMT) assembly.