Vishay P-Channel MOSFET, 6.1 A Continuous Drain Current, 50 V Drain Source Voltage, 40 W Power Dissipation IRF9Z20PBF

Vishay IRF9Z20PBF is a P-Channel MOSFET transistor designed for efficient semiconductor switching applications. It features a maximum continuous drain current rating of 6.1 amperes and a maximum drain-source voltage of 50 volts, delivered in a robust and standardized TO-220 package suitable for through-hole mountings.

This enhancement mode MOSFET operates reliably at temperatures ranging from -55°C to 150°C, making it suitable for various industrial and electronic environments, including power management and discrete semiconductor applications.

The device exhibits a maximum power dissipation of 40 watts and a low maximum drain-source resistance of 280 milliohms, ensuring effective heat and power management. The typical gate charge at the designated gate voltage is 17 nanocoulombs, which contributes to its responsive switching performance.

Physical dimensions are compact with a length of 10.51 mm, width of 4.65 mm, and height of 15.49 mm, ideal for PCB layouts requiring through-hole installation with a 3-pin configuration.

Type P channel enhancement mode design for robust switching. Maximum continuous drain current of 6.1 amperes. Drain-source voltage rating of 50 volts. Maximum power dissipation of 40 watts enhances thermal management. Maximum gate-source voltage range from -20 to +20 volts.

Typical gate charge of 17 nanocoulombs for efficient gate drive. Compact 3-pin TO-220 package for easy mounting. Operating temperature range from -55°C to 150°C. Dimensions: 10.51 mm length, 4.65 mm width, 15.49 mm height.

This MOSFET transistor by Vishay is optimal for industrial, electronic components, manufacturing, power management, and semiconductor applications requiring a reliable P-Channel device with efficient performance characteristics.

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