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Vishay TrenchFET Type P-Channel MOSFET 27 A 20 V Enhancement 8-Pin PowerPAK 1212 SISS23DN-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 0.78mm |
| Length | 3.3mm |
| Model | SISS23DN-T1-GE3 |
| Width | 3.3mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 27A |
| Maximum Drain Source Voltage Vds | 20V |
| Maximum Drain Source Resistance Rds | 11.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 57W |
| Typical Gate Charge Qg @ Vgs | 195nC |
| Maximum Gate Source Voltage Vgs | -8, +8V |
| Forward Voltage Vf | -0.8V |
Key Features
- This MOSFET features an 8-Pin PowerPAK 1212 surface mount package for compact electronic designs.
- Its enhancement mode channel provides controlled switching with low on-resistance of 11.5 milliohms.
- Maximum power dissipation is rated at 57 Watts, supporting robust performance in demanding applications.
- Operating temperature range spans from -55°C to 150°C for versatile environmental conditions.
- The device includes a typical gate charge of 195 nanocoulombs ensuring fast switching characteristics.
- It supports a maximum gate-source voltage of -8 to +8 Volts to maintain gate stability.
- Physical dimensions measure 3.3 mm length, 3.3 mm width, and 0.78 mm height, allowing space-efficient PCB integration.
- Manufactured to high standards in China with no specific automotive certification.
Product Description
Vishay SISS23DN-T1-GE3 is a TrenchFET Type P-Channel MOSFET engineered for electronic, power management, and semiconductor applications requiring efficient switching at moderate voltage and current ratings. It operates with a maximum continuous drain current of 27 Amps and can withstand a drain-source voltage of 20 Volts.
This MOSFET is housed in a compact 8-Pin PowerPAK 1212 package, designed for surface mounting on PCBs, facilitating high-density board layouts. Its enhancement mode channel provides low resistance and high-speed switching, optimized for power switching circuits and load drives.
Key performance metrics include a maximum power dissipation of 57 Watts, a typical gate charge of 195 nC at Vgs, and a maximum gate-source voltage range of -8 to +8 Volts, enabling stable gate operation and minimal switching losses. The device’s forward voltage is rated at -0.8 Volts, contributing to efficient conduction.
Temperature flexibility is provided with an operating temperature range from -55°C to 150°C, suitable for industrial and commercial electronics exposed to varying thermal environments. Its physical size of 3.3 mm by 3.3 mm by 0.78 mm supports compact design requirements.
Manufactured in China, this MOSFET does not carry automotive-specific approvals but is ideal for a broad range of applications including power supplies, DC-DC converters, and electronic control units in industrial and commercial fields.
This MOSFET features an 8-Pin PowerPAK 1212 surface mount package for compact electronic designs. Enhancement mode channel with low on-resistance for efficient switching. High power dissipation capacity suitable for demanding applications.
Wide operating temperature range to maintain reliability under diverse conditions. Fast switching with typical gate charge of 195 nC at Vgs. Stable gate control with maximum gate-source voltage of -8 to +8 Volts. Small package dimensions allow for high-density PCB assembly.
Explore Vishay MOSFETs and power semiconductor products on EnvMart for high-quality electronic components dedicated to industrial, laboratory, manufacturing, and commercial uses.
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Frequently Asked Questions
The maximum continuous drain current for this model is 27 Amps.
It can withstand a maximum drain-source voltage of 20 Volts.
The maximum drain-source resistance is rated at 11.5 milliohms.
The typical gate charge is 195 nanocoulombs at Vgs.
The physical dimensions are 3.3 mm in length, 3.3 mm in width, and 0.78 mm in height.
The operating temperature range spans from -55°C to 150°C.
It is housed in an 8-Pin PowerPAK 1212 surface mount package.
The maximum power dissipation is rated at 57 Watts.
The maximum gate-source voltage is -8 to +8 Volts.
This device features a Type P enhancement mode channel.
It is suitable for power supplies, DC-DC converters, and electronic control units in industrial and commercial applications.
This MOSFET is manufactured in China.
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