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Vishay N-Channel MOSFET 1.5 A 100 V Enhancement Mode Surface Mount 4-Pin SOT-223 IRLL110TRPBF
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.8mm |
| Length | 6.7mm |
| Model | IRLL110TRPBF |
| Width | 3.7mm |
| Mount Type | Surface |
| Series | IRLL |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-223 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 4 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 1.5A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 760mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 3.1W |
| Typical Gate Charge Qg @ Vgs | 6.1nC |
| Maximum Gate Source Voltage Vgs | -10, +10V |
| Forward Voltage Vf | 2.5V |
| N-Channel MOSFET, 1.5 A, 100 V, 3+Tab-Pin SOT-223 Vishay IRLL110PBFBrand | Vishay |
Key Features
- This device features a compact 4-pin SOT-223 surface mount package.
- It offers a low maximum drain-source resistance of 760 milliohms ensuring efficient switching.
- The maximum power dissipation rating is 3.1 watts, suitable for moderate power applications.
- Operating temperature ranges from -55°C to 150°C for wide thermal tolerance.
- The typical gate charge is 6.1 nanocoulombs at specified gate-source voltage.
- Maximum gate-source voltage is rated between -10V and +10V, providing stable gate control.
- The device’s physical dimensions are 6.7 mm length, 3.7 mm width, and 1.8 mm height.
- Forward voltage drop is 2.5 V during conduction, indicating efficient power handling.
Product Description
Vishay IRLL110TRPBF N-Channel MOSFET offers a robust solution for electronic components requiring efficient switching capabilities and moderate power handling. Featuring enhancement mode operation, this device supports a maximum continuous drain current of 1.5 A with a maximum voltage rating of 100 V between drain and source terminals.
The MOSFET is housed in a compact 4-pin SOT-223 package suitable for surface mounting, facilitating ease of integration in high-density circuit boards. It demonstrates a maximum drain-source resistance of 760 milliohms, optimizing efficiency and minimizing power loss.
Designed for durability, it operates reliably across a wide temperature range from -55 degrees Celsius up to 150 degrees Celsius, making it suitable for various industrial, commercial, and electronic applications including power management, signal switching, and amplification tasks.
Key electrical characteristics include a maximum power dissipation of 3.1 watts and a typical gate charge of 6.1 nanocoulombs, ensuring fast switching performance. The gate voltage limits are -10 to +10 volts, protecting the device from voltage overstress.
Physically, the device measures 6.7 mm in length, 3.7 mm wide, and 1.8 mm tall, accommodating compact design requirements. The forward voltage drop of 2.5 volts under conduction complements its efficient performance.
Vishay IRLL110TRPBF is widely used in the electronics manufacturing industry, laboratories, power electronics, and embedded systems. Its surface mount design simplifies assembly on printed circuit boards, enhancing production efficiency.
This MOSFET supports a maximum continuous drain current of 1.5 A. Maximum drain-source voltage rating is 100 V for reliable operation. Package is SOT-223 with 4 pins for surface mount technology. Low drain-source resistance reduces power losses in circuits.
Wide operating temperature range from -55°C to 150°C. Maximum power dissipation rating of 3.1 W. Typical gate charge is 6.1 nC supporting fast switching. Forward voltage drop of 2.5 V ensures efficient conduction. Compact dimensions (6.7 mm x 3.7 mm x 1.8 mm) allow versatile PCB layout.
Explore more Vishay semiconductor MOSFETs and electronic components on EnvMart for reliable industrial and commercial use.
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Frequently Asked Questions
The maximum continuous drain current for this model is 1.5 A.
The maximum drain-source voltage rating is 100 V.
It has a maximum power dissipation rating of 3.1 watts.
The typical gate charge is 6.1 nanocoulombs at the specified gate-source voltage.
The physical dimensions of this model are 6.7 mm in length, 3.7 mm in width, and 1.8 mm in height.
The maximum gate-source voltage is rated between -10 V and +10 V.
The forward voltage drop during conduction is 2.5 V.
The maximum drain-source resistance is 760 milliohms, which helps optimize efficiency.
It operates reliably within a temperature range from -55°C to 150°C.
This device is housed in a compact 4-pin SOT-223 surface mount package.
It features an N-channel configuration with enhancement mode operation.
This MOSFET is suitable for applications such as power management, signal switching, and amplification tasks.
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