$0.86
$0.83
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay TrenchFET Type P-Channel MOSFET, 8 A, 12 V Enhancement Mode, 6-Pin TSOP SI3477DV-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1mm |
| Length | 3.1mm |
| Model | SI3477DV-T1-GE3 |
| Width | 1.7mm |
| Mount Type | Surface |
| Series | TrenchFET |
| Maximum Operating Temperature | 150°C |
| Package Type | TSOP |
| Minimum Operating Temperature | -55°C |
| Pin Count | 6 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8A |
| Maximum Drain Source Voltage Vds | 12V |
| Maximum Drain Source Resistance Rds | 33mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 4.2W |
| Typical Gate Charge Qg @ Vgs | 58nC |
| Maximum Gate Source Voltage Vgs | -10, +10V |
| Forward Voltage Vf | -0.8V |
Key Features
- Employs TrenchFET Gen III technology for enhanced performance.
- Features a surface mount TSOP package with 6 pins for versatile PCB mounting.
- Offers low drain-source resistance of 33 milliohms for efficient conduction.
- Supports a maximum power dissipation of 4.2 watts for reliable operation.
- Designed for operating temperature range from -55°C to 150°C.
- Utilizes enhancement mode channel for effective switching control.
- Equipped with typical gate charge of 58 nanoCoulombs at Vgs 8 V for fast switching.
- Maximum gate-source voltage rating is ±10 volts ensuring device protection.
Product Description
Vishay SI3477DV-T1-GE3 is a TrenchFET Type P-Channel MOSFET designed for efficient switching and amplification in electronic circuits. Rated for a continuous drain current of 8 amperes and a maximum drain-source voltage of 12 volts, this enhancement mode MOSFET provides reliable performance in a compact 6-pin TSOP surface-mount package.
The device features a low on-resistance of 33 milliohms which enhances conduction efficiency and reduces heat dissipation during operation. Its maximum power dissipation of 4.2 watts allows stable performance under moderate load conditions. The MOSFET is capable of operating reliably in harsh temperature environments ranging from -55°C to 150°C.
Ideal for use in power management, switching regulators, load switching, and amplification applications, this MOSFET supports fast switching with a typical gate charge of 58 nanoCoulombs at a gate-source voltage of 8 V. The gate can safely tolerate voltages up to ±10 V, ensuring robustness against voltage transients.
The compact dimensions (3.1 mm length, 1.7 mm width, and 1 mm height) make it suitable for space-constrained electronics including portable and automotive systems. Manufactured under Vishay’s quality standards in China, this MOSFET complies with industrial requirements for electronics and semiconductor components.
Key Features include:. TrenchFET Gen III technology for reduced conduction losses. Surface mount TSOP 6-pin package facilitates easy PCB assembly. Low Rds(on) resistance of 33 milliohms minimizes power loss. High power dissipation capability up to 4.2 watts.
Wide operating temperature from -55°C up to 150°C for industrial use. Enhancement mode P-channel operation ensures effective control. Fast switching with typical gate charge of 58 nC at Vgs 8V. Robust gate-source voltage tolerance ±10 V ensures device longevity.
Compact footprint optimized for modern electronic design.
This MOSFET is commonly used in Industrial, Automotive, Power Management, and Consumer Electronics applications requiring reliable, efficient power switching and control. For comprehensive design integration, detailed datasheets and technical documents are available from Vishay.
EnvMart offers this Vishay SI3477DV-T1-GE3 MOSFET as part of our extensive semiconductor portfolio, serving customers in industrial and electronics manufacturing sectors.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 8 amperes.
The maximum drain-source voltage rating is 12 volts.
The typical gate charge at a gate-source voltage of 8 V is 58 nanoCoulombs.
It features a low on-resistance of 33 milliohms, enhancing conduction efficiency.
The operating temperature range is from -55°C to 150°C.
The maximum power dissipation capability is 4.2 watts.
It comes in a surface mount TSOP package with 6 pins.
The dimensions are 1 mm in height, 3.1 mm in length, and 1.7 mm in width.
The maximum gate-source voltage rating is ±10 volts.
It is suitable for power management, switching regulators, load switching, and amplification applications.
This model utilizes an enhancement mode P-channel operation for effective control.
It is manufactured in China under Vishay’s quality standards.
Related Products
$23.16
$20.22
-12.7%
Other Products from this brand
$1.64
$1.59
-3%
New
Recently Viewed Products
$0.86
$0.83
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent