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Vishay N-Channel MOSFET 12 A 30 V Enhancement 8-Pin SOIC SI4178DY-T1-GE3
Specifications
| Country of Origin | China |
|---|---|
| Brand | Vishay |
| Height | 1.55mm |
| Length | 5mm |
| Model | SI4178DY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | Si4178DY |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 12A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 33mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 5W |
| Typical Gate Charge Qg @ Vgs | 7.5nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 0.85V |
| N-Channel MOSFET, 6.5 A, 30 V, 8-Pin SOIC Vishay SI4800BDY-T1-E3Brand | Vishay |
Key Features
- Supports medium-voltage switching with a 30 V maximum drain-source voltage.
- Capable of continuous current of 12 A suitable for high-current load control.
- Low on-resistance of 33 milliohms reduces conduction losses.
- Typical gate charge of 7.5 nanocoulombs allows fast switching performance.
- Maximum power dissipation rating of 5 watts enables efficient thermal management.
- Wide operating temperature range from -55°C to 150°C ensures reliability under thermal extremes.
- Surface-mount SOIC 8-pin package with compact dimensions and low profile height of 1.55 mm.
- RoHS compliant, suitable for industrial and commercial electronic designs.
Product Description
Vishay SI4178DY-T1-GE3 is an N-Channel MOSFET designed as an enhancement mode device, intended for power switching and management in compact electronic systems. It features a maximum continuous drain current of 12 A and a maximum drain-source voltage of 30 V, making it ideal for medium-voltage switching applications requiring reliable performance.
Its surface-mount SOIC 8-pin package allows for convenient board-level mounting with a low profile height of 1.55 mm. The device's low on-resistance of 33 milliohms minimizes conduction losses, while a typical gate charge of 7.5 nC facilitates fast gate transitions, improving switching efficiency.
The MOSFET is rated for a maximum power dissipation of 5 watts, which requires designers to implement adequate copper area and thermal vias on PCBs to ensure optimal heat dissipation and maintain junction temperature within safe limits. It supports a gate-source voltage up to ±25 V, necessitating suitable gate driver design to avoid gate-oxide stress.
Operating reliably over a temperature range from -55°C to 150°C, it is suitable for applications exposed to wide thermal extremes. This device complies with RoHS directives, supporting environmentally responsible product design.
Typical applications include DC-DC converter output stages, battery management systems, power distribution, motor drivers for compact actuators, and load switching in telecom equipment. The compact footprint and performance characteristics make it suitable for industrial, commercial, and embedded electronic systems where efficient high-current switching is required.
Supports medium-voltage switching with a 30 V maximum drain-source voltage. Capable of continuous current of 12 A suitable for high-current load control. Low on-resistance of 33 milliohms reduces conduction losses. Typical gate charge of 7.5 nanocoulombs allows fast switching performance.
Maximum power dissipation rating of 5 watts enables efficient thermal management. Wide operating temperature range from -55°C to 150°C ensures reliability under thermal extremes. Surface-mount SOIC 8-pin package with compact dimensions and low profile height of 1.55 mm.
RoHS compliant, suitable for industrial and commercial electronic designs. Explore more Vishay MOSFETs and related discrete semiconductors at EnvMart for industrial and electronic applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 12 A, making it suitable for high-current load control applications.
It has a maximum drain-source voltage of 30 V, which supports medium-voltage switching applications.
The on-resistance is 33 milliohms, which helps reduce conduction losses during operation.
The typical gate charge is 7.5 nanocoulombs, allowing for fast switching performance.
The maximum power dissipation rating is 5 watts, which enables efficient thermal management in applications.
It operates reliably over a wide temperature range from -55°C to 150°C, ensuring performance in thermal extremes.
This model comes in a surface-mount SOIC 8-pin package with a low profile height of 1.55 mm.
The dimensions are 5 mm in length, 4 mm in width, and a height of 1.55 mm.
The maximum gate-source voltage rating is ±25 V, which is important for gate driver design.
Yes, it is RoHS compliant, supporting environmentally responsible product design.
Typical applications include DC-DC converter output stages, battery management systems, and motor drivers for compact actuators.
The channel mode is enhancement, which is typical for power switching applications.
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