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Vishay P-Channel MOSFET 3.5 A 20 V Enhancement Mode 3-Pin SOT-23 SI2377EDS-T1-GE3

Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin China
Brand Vishay
Height 1.02mm
Length 3.04mm
Model SI2377EDS-T1-GE3
Width 1.4mm
Mount Type Surface
Series Si2377EDS
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 3.5A
Maximum Drain Source Voltage Vds 20V
Maximum Drain Source Resistance Rds 165mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.8W
Typical Gate Charge Qg @ Vgs 14nC
Maximum Gate Source Voltage Vgs -8, +8V
Forward Voltage Vf 0.8V

Key Features

  • Type P channel enhancement mode MOSFET provides reliable power management.
  • Maximum continuous drain current of 3.5 A supports moderate power needs.
  • Compact 3-pin SOT-23 surface mount package for space-saving PCB layouts.
  • Low typical gate charge of 14 nC enables fast switching performance.
  • Maximum power dissipation of 1.8 W supports heat dissipation under load.
  • Wide operating temperature range from -55°C to 150°C ensures durability.
  • Maximum drain-source resistance of 165 mΩ minimizes conduction losses.
  • Typical forward voltage of 0.8 V enhances efficiency in switching circuits.

Product Description

Vishay SI2377EDS-T1-GE3 is a high-quality P-Channel MOSFET featuring an enhancement mode design suited for power switching and control in various electronic and industrial applications. It delivers a maximum continuous drain current of 3.5 A and can handle drain-source voltages up to 20 V, making it ideal for moderate power management tasks in circuits requiring efficient switching with reduced conduction losses.

This MOSFET is housed in a compact 3-pin SOT-23 package with a surface mount mounting type, facilitating easy integration into densely packed circuit boards while ensuring reliable operation. The device supports a maximum power dissipation of 1.8 W, effectively managing heat in typical operating conditions. Its low typical gate charge of 14 nC enables fast switching for responsive electronic control.

Operating temperature ranges from -55°C to 150°C provide excellent environmental tolerance, suitable for automotive, industrial, and consumer electronics requiring stability across wide temperature variations. The typical forward voltage is 0.8 V, contributing to overall efficiency in switching applications. This MOSFET can tolerate gate-source voltages up to ±8 V, allowing diverse drive voltages without device damage.

Type P channel enhancement mode MOSFET offers dependable power switching. 3.5 A maximum continuous drain current supports moderate loads. Compact SOT-23 package with 3 pins enables space-efficient PCB design. Low gate charge of 14 nC improves switching speed and efficiency.

Maximum power dissipation rating of 1.8 W aids thermal management. Wide temperature operation range from -55°C to 150°C ensures robustness. Drain-source resistance of 165 milliohms reduces conduction losses. Forward voltage of 0.8 V supports energy-efficient operation.

Gate-source voltage limit of -8 to +8 V protects device integrity. Physical dimensions: 3.04 mm length, 1.4 mm width, and 1.02 mm height for compactness.

Commonly used in electronics, power management, industrial automation, and other applications requiring efficient semiconductor switching, the Vishay SI2377EDS-T1-GE3 MOSFET is an essential component for modern electronic design. Its robust specifications and reliable brand reputation make it suitable for manufacturing, HVAC, and laboratory instrumentation.

Explore more components in semiconductor MOSFET categories at EnvMart for comprehensive electronic solutions.

Vishay P-Channel MOSFET 3.5 A 20 V Enhancement Mode 3-Pin SOT-23 SI2377EDS-T1-GE3
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Frequently Asked Questions

The maximum continuous drain current for the Vishay SI2377EDS-T1-GE3 is 3.5 A.

This MOSFET can handle a maximum drain-source voltage of 20 V.

The SI2377EDS-T1-GE3 is housed in a compact SOT-23 package.

The typical gate charge for this model is 14 nC.

The maximum power dissipation rating is 1.8 W.

It operates within a temperature range of -55°C to 150°C.

The maximum drain-source resistance is 165 mΩ.

The typical forward voltage is 0.8 V.

This model features a P-channel enhancement mode design.

This MOSFET has a total of 3 pins.

The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.02 mm in height.

The maximum gate-source voltage is ±8 V.

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