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Vishay P-Channel MOSFET 50 V, 9.9 A, Enhancement Mode, 3-Pin TO-252 IRFR9020TRPBF
Specifications
| Country of Origin | Malaysia |
|---|---|
| Brand | Vishay |
| Height | 2.38mm |
| Length | 6.73mm |
| Model | IRFR9020TRPBF |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | IRFR |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 9.9A |
| Maximum Drain Source Voltage Vds | 50V |
| Maximum Drain Source Resistance Rds | 280mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 42W |
| Typical Gate Charge Qg @ Vgs | 9.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -6.3V |
Key Features
- Designed with a TO-252 package and surface mount type for efficient PCB integration.
- Offers a low maximum drain-source resistance of 280 milliohms for reduced power loss.
- Maximum power dissipation rated at 42 W ensuring reliable performance under high loads.
- Operates within a wide temperature range from -55°C to 150°C for versatile applications.
- Equipped with a typical gate charge of 9.4 nC at Vgs for fast switching.
- Pin count of 3 facilitates simple connection and compact circuit board layout.
- Maximum gate-source voltage range from -20 V to +20 V protects the device against voltage spikes.
- Compact device dimensions with height 2.38 mm, length 6.73 mm, and width 6.22 mm enable space-saving designs.
Product Description
Vishay IRFR9020TRPBF is a P-Channel MOSFET designed for discrete semiconductor applications, delivering a maximum continuous drain current of 9.9 amperes and a maximum drain-source voltage rating of 50 volts. It utilizes enhancement mode operation to enable precise switching control in electronic circuits.
Packaged in a TO-252 surface-mount package, this MOSFET is compact and suitable for surface mounting on printed circuit boards. Its low maximum drain-source resistance of 280 milliohms helps minimize conduction losses, enhancing power efficiency. The device is capable of dissipating up to 42 watts of power, suitable for moderately demanding electrical loads.
The operating temperature range from -55°C to 150°C allows it to maintain performance under harsh environmental conditions. Its typical gate charge at Vgs is 9.4 nanoCoulombs, supporting fast gate switching characteristics for high-frequency applications. The device features a 3-pin configuration simplifying circuit design and integration.
Additional device specifications include a maximum gate-source voltage tolerance ranging from -20 to +20 volts, providing robustness against transient voltage spikes. With measurements of 2.38 mm in height, 6.73 mm in length, and 6.22 mm in width, this MOSFET is designed to fit into compact electronic assemblies.
This semiconductor component is manufactured in Malaysia and meets industry standards for discrete power MOSFETs. It is widely used in power management, signal switching, and amplification in industrial, automotive, and consumer electronics.
Designed with a TO-252 package and surface mount type for efficient PCB integration. Offers a low maximum drain-source resistance of 280 milliohms for reduced power loss. Maximum power dissipation rated at 42 W ensuring reliable performance under high loads.
Operates within a wide temperature range from -55°C to 150°C for versatile applications. Equipped with a typical gate charge of 9.4 nC at Vgs for fast switching. Pin count of 3 facilitates simple connection and compact circuit board layout.
Maximum gate-source voltage range from -20 V to +20 V protects the device against voltage spikes. Compact device dimensions with height 2.38 mm, length 6.73 mm, and width 6.22 mm enable space-saving designs. Find Vishay MOSFETs and other discrete semiconductors at EnvMart for industrial, automotive, and electronic component applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 9.9 amperes.
This MOSFET has a maximum drain-source voltage rating of 50 volts.
The dimensions of this device are 2.38 mm in height, 6.73 mm in length, and 6.22 mm in width.
It is rated for a maximum power dissipation of 42 watts.
The typical gate charge at Vgs for this model is 9.4 nanoCoulombs.
It operates within a temperature range from -55°C to 150°C.
The maximum gate-source voltage range is from -20 V to +20 V.
This model is packaged in a TO-252 surface-mount package.
It features a 3-pin configuration, facilitating simple connections.
The maximum drain-source resistance is 280 milliohms.
This device utilizes a P-Channel type configuration.
This model is manufactured in Malaysia.
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