onsemi PowerTrench N-Channel MOSFET 160 A Maximum Continuous Drain Current 30 V Drain Source Voltage TO-252 Package FDD8870

onsemi FDD8870 PowerTrench N-Channel MOSFET is a high-performance surface-mount transistor designed for use in power electronic applications operating at a maximum continuous drain current of 160 A and drain-source voltage of 30 V.

This enhancement mode N-channel MOSFET is housed in a TO-252 package with 3 pins, providing a compact footprint ideal for dense PCB layouts.

With a maximum drain-source resistance of 0.0039 ohms, the FDD8870 ensures minimal conduction losses, contributing to efficient energy usage and reduced heat generation during operation.

The device supports a maximum power dissipation of 160 W, enabling reliable operation under high load conditions within its temperature ratings of -55°C minimum to 175°C maximum. Typical gate charge of 91 nanocoulombs at gate-source voltage ensures fast switching speeds suitable for switching regulators and power conversion circuits.

Dimensionally, the MOSFET measures 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height, facilitating integration into compact designs. High continuous drain current up to 160 A. Low drain-source resistance of 0.0039 Ω ensuring efficient conduction.

Wide operating temperature range from -55°C to 175°C. Compact TO-252 3-pin surface mount package. Suitable for power management and switching in industrial and automotive electronics. This transistor is ideal for use in industrial electronics, power supplies, motor control circuits, and other applications requiring robust power switching performance.

onsemi products support advanced power system applications with reliable and efficient solutions. Explore more onsemi semiconductor components at EnvMart to enhance your electronic designs.