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onsemi PowerTrench Type P-Channel MOSFET, 8.4 A, 40 V, Enhancement Mode, 3-Pin TO-252 FDD4685
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FDD4685 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 8.4A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 42mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 69W |
| Typical Gate Charge Qg @ Vgs | 19nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Key Features
- This MOSFET features a maximum continuous drain current of 8.4 A.
- It operates at a maximum drain-source voltage of 40 V.
- The device utilizes PowerTrench technology for improved efficiency.
- Incorporates an enhancement mode channel for controlled switching.
- Offers a low maximum drain-source resistance of 42 mΩ for minimal power loss.
- Equipped with a typical gate charge of 19 nC at Vgs for efficient gate drive.
- Supports a maximum gate-source voltage range from -20 V to +20 V.
- Has a maximum power dissipation of 69 W for robust operation.
Product Description
onsemi FDD4685 is a PowerTrench Type P-Channel MOSFET optimized for surface-mount technology applications. It offers a maximum continuous drain current of 8.4 A and a drain-source voltage rating of 40 V. Tailored for efficient power management, the enhancement mode channel design allows for responsive and precise control in switching applications.
This device comes in a compact 3-pin TO-252 package, facilitating integration into a wide range of electronic circuits. The low drain-source resistance of 42 mΩ ensures minimal conduction losses, contributing to the overall energy efficiency of the system.
The MOSFET features a typical gate charge of 19 nC at the gate-source voltage, enabling fast switching speeds while minimizing power consumption. It supports a maximum gate-source voltage range of -20 V to +20 V, providing robust performance and protection against voltage spikes.
The maximum power dissipation of 69 W allows the device to handle demanding operational loads without compromising stability. The device withstands operating temperatures from -55°C up to 150°C, suitable for a variety of demanding industrial, automotive, and consumer electronics applications.
This MOSFET is ideal for inclusion in power management systems, motor controls, and switching regulators within industrial, automotive, and commercial electronics sectors. onsemi’s PowerTrench technology ensures reliable, high-efficiency performance in compact footprints.
This MOSFET features a maximum continuous drain current of 8.4 A. It operates at a maximum drain-source voltage of 40 V. The device utilizes PowerTrench technology for improved efficiency. Incorporates an enhancement mode channel for controlled switching.
Offers a low maximum drain-source resistance of 42 mΩ for minimal power loss. Equipped with a typical gate charge of 19 nC at Vgs for efficient gate drive. Supports a maximum gate-source voltage range from -20 V to +20 V.
Has a maximum power dissipation of 69 W for robust operation. Operating temperature ranges from -55°C to 150°C, ensuring reliability under extreme conditions. Explore more on semiconductor MOSFETs with onsemi products in the Electronics & Electricals category on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8.4 A.
The maximum drain-source voltage rating is 40 V.
This MOSFET comes in a 3-pin TO-252 package type.
The typical gate charge at Vgs is 19 nC.
The maximum power dissipation for this model is 69 W.
It supports a maximum gate-source voltage range from -20 V to +20 V.
The maximum drain-source resistance is 42 mΩ.
The operating temperature ranges from -55°C to 150°C.
This model utilizes an enhancement mode channel.
The height of this MOSFET is 2.39 mm.
The length is 6.73 mm and the width is 6.22 mm.
This model is designed for surface mounting.
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