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onsemi PowerTrench N-Channel MOSFET 18 A 40 V Enhancement 8-Pin SOIC FDS8638
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.575mm |
| Length | 4.9mm |
| Model | FDS8638 |
| Width | 3.9mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 6.3mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 61nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.3V |
Key Features
- High performance PowerTrench design for efficient switching.
- Maximum continuous drain current of 18 amperes.
- Rated for maximum drain-source voltage of 40 volts.
- Enhancement mode channel type for better control and stability.
- Compact surface-mount SOIC package with 8 pins.
- Low maximum drain-source resistance of 6.3 milliohms.
- Typical gate charge of 61 nanocoulombs enhancing switching speed.
- Wide operating temperature range from -55°C to 150°C.
Product Description
onsemi FDS8638 PowerTrench N-Channel MOSFET is a discrete semiconductor device designed for high efficiency switching applications with a continuous drain current rating of 18 A and a maximum drain-source voltage of 40 V. It features an enhancement channel mode and is housed in a compact 8-pin SOIC surface-mount package measuring 4.9 mm length, 3.9 mm width, and 1.575 mm height.
This MOSFET offers a low maximum drain-source resistance of 6.3 mΩ, delivering excellent conduction efficiency and reduced power loss. The typical gate charge of 61 nC at Vgs supports fast switching speeds, making it suitable for power management circuits and industrial power applications.
Designed to withstand a wide operating temperature range from -55°C to 150°C, the FDS8638 ensures reliable performance in various environments including industrial, automotive (non-automotive standard), and commercial electronics. The device has a power dissipation capability of 2.5 W and a forward voltage of 1.3 V, optimized for stable operation.
With no special certifications or automotive standards, this device is ideal for laboratory research, industrial power supplies, and embedded system designs requiring reliable N-channel MOSFETs with moderate current and voltage ratings.
High performance PowerTrench design for efficient switching. Maximum continuous drain current of 18 amperes. Rated drain-source voltage up to 40 volts. Enhancement mode channel type for enhanced control. Compact 8-pin SOIC surface-mount package.
Low maximum drain-source resistance of 6.3 milliohms. Typical gate charge of 61 nanocoulombs for fast switching. Operating temperature range from -55°C to 150°C. Maximum power dissipation rating of 2.5 watts. Forward voltage of 1.3 volts for efficient conduction.
Explore more semiconductor components and power MOSFETs available at EnvMart for industrial, laboratory, and commercial applications.
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Frequently Asked Questions
The maximum continuous drain current for this model is 18 amperes.
It is rated for a maximum drain-source voltage of 40 volts.
This model comes in a compact 8-pin SOIC surface-mount package.
The maximum drain-source resistance is 6.3 milliohms.
The typical gate charge is 61 nanocoulombs.
It operates within a temperature range from -55°C to 150°C.
The maximum power dissipation rating is 2.5 watts.
The forward voltage is rated at 1.3 volts.
This model features an enhancement mode channel type.
The dimensions are 1.575 mm in height, 4.9 mm in length, and 3.9 mm in width.
It is suitable for power management circuits and industrial power applications.
The maximum gate-source voltage is -20V to +20V.
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