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STMicroelectronics N-Channel IGBT 9 A 600 V 3-Pin TO-220 Through Hole STGF10NC60KD
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 16.4mm |
| Length | 10.4mm |
| Model | STGF10NC60KD |
| Width | 4.6mm |
| Mount Type | Through Hole |
| Series | Low Drop |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 9A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.5V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 25W |
| Maximum Gate Emitter Voltage VGEO | 20 V |
Key Features
- High efficiency power semiconductor device optimized for fast switching.
- Maximum continuous collector current of 9 amperes to support medium power applications.
- Collector-emitter voltage rating of 600 volts suitable for power circuits.
- Package type TO-220 with through-hole mount designed for easy integration into circuits.
- Fast switching speed of 1 MHz for improved response in switching applications.
- Wide operating temperature range from -55°C to 150°C ensuring reliable performance.
- Low drop series device with maximum collector-emitter saturation voltage of 2.5 volts.
- Compact dimensions measuring 16.4 mm height, 10.4 mm length, and 4.6 mm width.
Product Description
STMicroelectronics STGF10NC60KD is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for use in power electronic circuits requiring efficient switching and high current handling capabilities.
This device supports a maximum continuous collector current of 9 A and withstands a collector-emitter voltage of up to 600 V, combining the low gate-drive characteristics of MOSFETs with the high-current handling capacity of bipolar transistors.
Featuring a 3-pin TO-220 through-hole package, it is suitable for power switching applications including industrial motor drives, power supplies, and other electronic control units.
The IGBT operates efficiently at switching speeds up to 1 MHz and maintains a maximum power dissipation of 25 W, making it ideal for medium power applications.
Its wide operating temperature range from -55°C to 150°C ensures robust performance in diverse environmental conditions. The device exhibits a collector-emitter saturation voltage of only 2.5 V, reducing power loss and improving thermal efficiency.
The compact form factor with dimensions of 16.4 mm height, 10.4 mm length, and 4.6 mm width allows integration into various PCB layouts effectively. High efficiency power semiconductor device optimized for fast switching.
Maximum continuous collector current of 9 amperes to support medium power applications. Collector-emitter voltage rating of 600 volts suitable for power circuits. Package type TO-220 with through-hole mount designed for easy integration into circuits.
Fast switching speed of 1 MHz for improved response in switching applications. Wide operating temperature range from -55°C to 150°C ensuring reliable performance. Low drop series device with maximum collector-emitter saturation voltage of 2.5 volts.
Compact dimensions measuring 16.4 mm height, 10.4 mm length, and 4.6 mm width. Designed for power switching, industrial electronic, and motor control uses. Device certified RoHS compliant with no automotive standard compliance.
This IGBT is ideal for industrial, manufacturing, power control, motor drive, and electronic applications requiring a reliable and efficient power switching device. Explore more STMicroelectronics semiconductor components and power devices at EnvMart for advanced technical solutions.
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Frequently Asked Questions
The maximum continuous collector current for this model is 9 A.
This IGBT has a collector-emitter voltage rating of 600 V.
It operates at a fast switching speed of up to 1 MHz.
The dimensions of the TO-220 package are 16.4 mm in height, 10.4 mm in length, and 4.6 mm in width.
The operating temperature range is from -55°C to 150°C.
The maximum collector-emitter saturation voltage is 2.5 V.
This model features a through-hole mount type.
The maximum power dissipation for this IGBT is 25 W.
This device has a pin count of 3.
It utilizes an N-channel configuration.
Yes, this IGBT is certified RoHS compliant.
This IGBT is suitable for power switching, industrial motor drives, power supplies, and electronic control units.
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