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Nexperia Bipolar Transistor PNP 3-Pin SOT-8009 -100 mA, -65 V BC856BQCZ
Specifications
| Country of Origin | India |
|---|---|
| Brand | Nexperia |
| Model | BC856BQCZ |
| Mount Type | Surface |
| Series | BC856xQC |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-8009 |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | RoHS |
| Pin Count | 3 |
| Maximum Collector Emitter Voltage Vceo | -65V |
| Minimum DC Current Gain hFE | 220 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | -6V |
| Maximum Collector Base Voltage VCBO | -80V |
| Automotive Standard | AEC-Q101 |
| Maximum DC Collector Current Idc | -100mA |
| Transistor Configuration | PNP |
Key Features
- The transistor is housed in a compact SOT-8009 surface-mount package.
- Maximum collector base voltage rating is -80 V ensuring reliable operation.
- It features a minimum DC current gain (hFE) of 220.
- Wide operating temperature range from -55°C to 150°C.
- Automotive standard AEC-Q101 certified and RoHS compliant.
- Designed with low package height of 0.5 mm suitable for space-constrained applications.
- Side-wettable flanks facilitate automated optical inspection (AOI).
- Ideal for use in industrial, automotive, and electronic circuit designs.
Product Description
Nexperia BC856BQCZ is a high-quality bipolar PNP transistor configured with 3 pins in a SOT-8009 leadless surface-mounted device (SMD) package. It supports a maximum DC collector current of -100 mA and a maximum collector-emitter voltage of -65 V, making it well suited for general-purpose electronic circuit applications.
Encased in an ultra-compact DFN1412D-3 type package with a low profile height of only 0.5 mm, the device offers a smaller footprint compared to conventional leaded transistors. This compact design aids in space-saving PCB layouts.
The transistor's maximum collector base voltage is rated at -80 V, with a minimum DC current gain (hFE) of 220, providing efficient amplification performance. Its operating temperature range spans from -55°C to 150°C, ensuring performance stability under demanding environmental conditions.
The device conforms to automotive standard AEC-Q101 and is RoHS compliant, making it suitable for automotive and environmentally conscious manufacturing processes. It also features side-wettable flanks to enhance automated optical inspection during assembly processes.
This bipolar transistor finds extensive usage in industrial electronics, automotive systems, consumer devices, and other surface-mounted semiconductor circuit designs. Its capability for high power dissipation and compatibility with automatic optical inspection supports high-volume production efficiency.
The transistor is housed in a compact SOT-8009 surface-mount package. Maximum collector base voltage rating is -80 V ensuring reliable operation. It features a minimum DC current gain (hFE) of 220. Wide operating temperature range from -55°C to 150°C.
Automotive standard AEC-Q101 certified and RoHS compliant. Designed with low package height of 0.5 mm suitable for space-constrained applications. Side-wettable flanks facilitate automated optical inspection (AOI). Ideal for use in industrial, automotive, and electronic circuit designs.
Explore more high-quality discrete semiconductors and Bipolar Transistors at EnvMart for your electronic design needs.
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Frequently Asked Questions
The maximum collector-emitter voltage rating for this model is -65 V.
This transistor features a minimum DC current gain (hFE) of 220.
The operating temperature range for this model spans from -55°C to 150°C.
It is housed in a compact SOT-8009 surface-mount package.
The maximum collector base voltage for this model is rated at -80 V.
This transistor has a pin count of 3 and is configured as a PNP transistor.
Yes, it is AEC-Q101 certified and RoHS compliant.
The maximum DC collector current for this transistor is -100 mA.
The side-wettable flanks facilitate automated optical inspection (AOI) during assembly processes.
This bipolar transistor is suitable for use in industrial electronics, automotive systems, and consumer devices.
The height of the SOT-8009 package is 0.5 mm, making it suitable for space-constrained applications.
The country of origin for this transistor is India.
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