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STMicroelectronics N-Channel IGBT 80 A 600 V 3-Pin TO-247 Through Hole STGW60V60F

Category IGBT Brand STMicroelectronics Condition New

Specifications

Country of Origin India
Brand STMicroelectronics
Height 20.15mm
Length 14.8mm
Model STGW60V60F
Width 15.75mm
Mount Type Through Hole
Series V
Maximum Operating Temperature 175°C
Package Type TO-247
Minimum Operating Temperature -55°C
Standards/Approvals ECOPACK
Pin Count 3
Maximum Continuous Collector Current Ic 80A
Maximum Collector Emitter Voltage Vceo 600V
Maximum Collector Emitter Saturation Voltage VceSAT 2.3V
Channel Type N
Maximum Power Dissipation Pd 375W
Maximum Gate Emitter Voltage VGEO ±20 V

Key Features

  • High efficiency and fast switching performance for power applications.
  • Maximum power dissipation of 375 W ensures robust handling of power loads.
  • Wide operating temperature range from -55°C to 175°C supports harsh environments.
  • Maximum collector emitter saturation voltage of 2.3 V optimizes conduction losses.
  • Maximum gate emitter voltage of ±20 V allows reliable gate control.
  • Supports a switching speed of up to 1 MHz for efficient power conversion.
  • Compliance with ECOPACK standards ensures environmental friendliness.
  • Through-hole mount type eases assembly and replacement in industrial systems.

Product Description

STMicroelectronics STGW60V60F is a high-performance N-Channel Insulated Gate Bipolar Transistor (IGBT) designed for demanding power semiconductor applications. It supports a maximum continuous collector current of 80 A and a collector emitter voltage of 600 V in a robust 3-pin TO-247 through hole package. The device combines the simple gate-drive characteristics typical of MOSFETs with the low saturation voltage and high current capability of bipolar transistors, enabling efficient power switching in industrial, laboratory, and manufacturing environments.

With a maximum power dissipation rating of 375 W, the STGW60V60F ensures resilience under heavy load conditions. It operates reliably across a wide temperature range from -55°C to 175°C, making it suitable for harsh and variable operating conditions encountered in power management, motor drives, and inverters. The device supports switching speeds up to 1 MHz, allowing effective use in high-frequency power conversion systems.

Measuring 14.8 mm in length, 15.75 mm in width, and 20.15 mm in height, the compact TO-247 package provides ease of installation with its through-hole mounting style. The maximum collector emitter saturation voltage of 2.3 V minimizes conduction losses, improving overall efficiency. Gate voltage rating of ±20 V ensures secure and flexible gate driving conditions.

High efficiency and fast switching operation for power electronics. Robust power dissipation capacity supports heavy industrial workloads. Compact 3-pin TO-247 through hole package facilitates assembly and repair. Wide temperature tolerance suits industrial and rugged environments.

Enhanced environmental compliance via ECOPACK standards. Suitable for use in inverters, motor drives, and power supplies. Proven reliability for continuous operation under varied conditions.

The STGW60V60F IGBT from STMicroelectronics offers reliable performance for critical semiconductor power switch applications in electronics manufacturing, power conditioning, renewable energy systems, and automation equipment. Browse our electronics & electricals categories to find additional STMicroelectronics semiconductor components and discrete power transistors suitable for your design needs.

STMicroelectronics N-Channel IGBT 80 A 600 V 3-Pin TO-247 Through Hole STGW60V60F
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Frequently Asked Questions

The maximum continuous collector current for this model is 80 A.

The maximum collector emitter voltage is 600 V.

It has a maximum power dissipation rating of 375 W.

The operating temperature range is from -55°C to 175°C.

The maximum collector emitter saturation voltage is 2.3 V.

This model uses a through-hole mounting type.

The dimensions of the TO-247 package are 14.8 mm in length, 15.75 mm in width, and 20.15 mm in height.

The maximum gate emitter voltage is ±20 V.

It supports switching speeds of up to 1 MHz.

Yes, it complies with ECOPACK standards, ensuring environmental friendliness.

It is suitable for use in inverters, motor drives, and power supplies.

This model has a pin count of 3.

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