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STMicroelectronics N-Channel Trench Gate Field Stop IGBT 60 A 600 V 3-Pin TO-3PF Through Hole STGFW30V60DF
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 26.7mm |
| Length | 15.7mm |
| Model | STGFW30V60DF |
| Width | 5.7mm |
| Mount Type | Through Hole |
| Series | V |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-3PF |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | ECOPACK |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 60A |
| Maximum Collector Emitter Voltage Vceo | 600V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2.3V |
| Channel Type | N |
| Maximum Power Dissipation Pd | 260W |
| Maximum Gate Emitter Voltage VGEO | ±20 V |
Key Features
- Maximum continuous collector current of 60 A ensures high current capacity.
- Collector emitter voltage rated at 600 V for robust high voltage use.
- Power dissipation maximum of 260 W for reliable thermal management.
- Package type TO-3PF with through-hole mount type for easy PCB assembly.
- Operating temperature range from -55°C to 175°C suitable for harsh environments.
- Maximum gate emitter voltage is ±20 V to ensure gate stability and protection.
- Maximum collector emitter saturation voltage of 2.3 V for efficient switching performance.
- Trench gate field stop technology for improved switching and conduction characteristics.
Product Description
STMicroelectronics STGFW30V60DF is an N-Channel Trench Gate Field Stop IGBT designed for high efficiency and fast switching in industrial and electronic applications. This device integrates an insulated gate field-effect transistor (IGBT) combining the gate drive simplicity of MOSFETs with the low saturation voltage and high current capability of bipolar transistors.
The transistor supports a maximum continuous collector current of 60 A and a maximum collector-emitter voltage of 600 V, making it suitable for power switching applications requiring robust voltage and current ratings. Its power dissipation rating of 260 W enables effective thermal management under demanding conditions.
Featuring a 3-pin TO-3PF package with through-hole mounting, the STGFW30V60DF ensures reliable mechanical and electrical connection suitable for easy integration on printed circuit boards. It operates safely across a wide temperature range from -55°C up to 175°C, ensuring durability in industrial environments.
The device includes a maximum gate emitter voltage of ±20 V which safeguards gate oxide integrity and stability during operation. The low maximum collector emitter saturation voltage of 2.3 V further enhances its switching efficiency and reduces power losses.
This IGBT utilizes trench gate field stop technology that optimizes switching performance and conduction characteristics, making it ideal for power electronics, motor drives, and inverter applications in industrial, manufacturing, and electronic control systems.
Maximum continuous collector current of 60 A. Maximum collector emitter voltage of 600 V. Power dissipation of 260 W. 3-pin TO-3PF package with through-hole mount. Operating temperature range from -55°C to 175°C. Maximum gate emitter voltage ±20 V.
Maximum collector emitter saturation voltage 2.3 V. Trench gate field stop technology for efficient switching. Compact dimensions: 26.7 mm height, 15.7 mm length, 5.7 mm width. Non-automotive standard device.
This IGBT is recommended for industrial power switching, motor control, inverter circuits, and other semiconductor applications requiring fast, efficient switching with high current and voltage handling.
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Frequently Asked Questions
The maximum continuous collector current for the STGFW30V60DF is 60 A.
This model has a maximum collector-emitter voltage rating of 600 V, making it suitable for high voltage applications.
The power dissipation maximum for this IGBT is 260 W, which supports effective thermal management.
The STGFW30V60DF comes in a TO-3PF package type with a through-hole mount style, allowing easy PCB assembly.
It operates within a temperature range of -55°C to 175°C, making it suitable for harsh environments.
The maximum gate-emitter voltage for the STGFW30V60DF is ±20 V, which helps ensure gate stability.
This model features a maximum collector-emitter saturation voltage of 2.3 V, enhancing its switching efficiency.
It utilizes trench gate field stop technology, which optimizes switching performance and conduction characteristics.
The dimensions of the STGFW30V60DF are 26.7 mm in height, 15.7 mm in length, and 5.7 mm in width.
This model has a pin count of 3, which is standard for its package type.
The STGFW30V60DF complies with ECOPACK standards, ensuring it meets environmental and safety requirements.
It is recommended for industrial power switching, motor control, and inverter circuits, among other semiconductor applications.
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