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Vishay ThunderFET N-Channel MOSFET 11.1A 100V Enhancement 8-Pin SOIC SI4056DY-T1-GE3

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Vishay ThunderFET N-Channel MOSFET 11.1A 100V Enhancement 8-Pin SOIC SI4056DY-T1-GE3

Name: Vishay ThunderFET N-Channel MOSFET 11.1A 100V Enhancement 8-Pin SOIC SI4056DY-T1-GE3
Brand: Vishay
SKU: 370704
Price: 0.74 USD
Availability: InStock

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Category MOSFET Brand Vishay Condition New

Specifications

Country of Origin	India
Brand	Vishay
Height	1.5mm
Length	5mm
Model	SI4056DY-T1-GE3
Width	4mm
Mount Type	Surface
Series	ThunderFET
Maximum Operating Temperature	150°C
Package Type	SOIC
Minimum Operating Temperature	-55°C
Pin Count	8
Channel Type	N
Maximum Continuous Drain Current Id	11.1A
Maximum Drain Source Voltage Vds	100V
Maximum Drain Source Resistance Rds	31mΩ
Channel Mode	Enhancement
Maximum Power Dissipation Pd	5.7W
Typical Gate Charge Qg @ Vgs	19.6nC
Maximum Gate Source Voltage Vgs	-20, +20V
Forward Voltage Vf	1.1V

Key Features

Provides maximum continuous drain current of 11.1 A for high power applications.
Maximum drain-source voltage of 100 V supports medium-voltage operations.
Features ThunderFET series technology ensuring reliable performance.
Enhancement channel mode maximizes switching efficiency.
Compact surface-mount SOIC package with 8 pins.
Low maximum drain-source resistance of 31 milliohms for reduced energy loss.
Operating temperature ranges from -55°C to 150°C for versatile usage.
Typical gate charge of 19.6 nC at Vgs facilitates fast switching.

Product Description

Vishay SI4056DY-T1-GE3 is a high-performance ThunderFET N-Channel MOSFET designed for applications requiring medium voltage and high current capacity. The device supports a continuous drain current of 11.1 A and a drain-source voltage rating of 100 V, making it suitable for power management and switching operations in electronic circuits.

Housed in an 8-pin SOIC surface-mount package with compact dimensions (5 mm length, 4 mm width, 1.5 mm height), this MOSFET integrates enhancement mode channel technology for reliable and efficient switching. It delivers a low maximum drain-source resistance of 31 milliohms, which helps minimize conduction losses and improve overall efficiency.

The device operates effectively within a wide temperature range from -55°C to 150°C, making it apt for industrial and automotive environments demanding robustness. Its typical gate charge of 19.6 nC at specified gate-source voltage supports quick switching, further enhancing performance in high-frequency circuits.

The SI4056DY-T1-GE3 is optimized for power dissipation up to 5.7 W, ensuring stable thermal behavior during intense operation. Maximum gate-source voltage is rated at ±20 V, with a forward voltage of 1.1 V, aligning with stringent semiconductor device requirements.

Maximum continuous drain current of 11.1 A for demanding load conditions. Drain-source voltage rating of 100 V suited for medium voltage applications. ThunderFET series ensures enhanced switching and low losses. Compact 8-pin SOIC surface mount package for easy PCB integration.

Low Rds(on) of 31 mΩ improves conduction efficiency and reduces heat. Wide operational temperature range from -55°C to +150°C supports harsh environments. Typical gate charge of 19.6 nC enables effective switching dynamics.

Rated gate-source voltage of ±20 V for versatile control. Power dissipation up to 5.7 W supports sustained operations.

This MOSFET is ideal for use in industrial electronics, power supplies, motor control, and automotive applications that require reliable switching devices with medium voltage and moderate current capabilities.

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Frequently Asked Questions

The Vishay SI4056DY-T1-GE3 has a maximum continuous drain current of 11.1 A, making it suitable for high power applications.

This model supports a maximum drain-source voltage of 100 V, which is appropriate for medium voltage operations.

The typical gate charge is 19.6 nC at the specified gate-source voltage, facilitating fast switching capabilities.

The dimensions of this MOSFET are 5 mm in length, 4 mm in width, and 1.5 mm in height, housed in an 8-pin SOIC package.

It is rated for a maximum power dissipation of 5.7 W, ensuring stable thermal behavior during operation.

The operating temperature range is from -55°C to 150°C, making it suitable for various environments, including industrial and automotive applications.

This model features an N-channel enhancement mode, which maximizes switching efficiency.

The maximum gate-source voltage is rated at ±20 V, allowing for versatile control in various applications.

The maximum drain-source resistance is 31 milliohms, which helps reduce energy loss during operation.

This MOSFET is ideal for use in industrial electronics, power supplies, motor control, and automotive applications that require reliable switching devices.