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Vishay N-Channel MOSFET, 18 A, 100 V Enhancement Mode, 8-Pin SOIC Package SI4190ADY-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.5mm |
| Length | 5mm |
| Model | SI4190ADY-T1-GE3 |
| Width | 4mm |
| Mount Type | Surface |
| Series | Si4190ADY |
| Maximum Operating Temperature | 150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 18A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 2.2Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 6W |
| Typical Gate Charge Qg @ Vgs | 44.4nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.1V |
Key Features
- High continuous drain current rating of 18 amperes for robust power handling.
- Maximum drain-source voltage of 100 volts suitable for medium-voltage applications.
- Enhancement mode channel type provides efficient switching characteristics.
- Compact SOIC 8-pin surface mount package with dimensions 5mm length and 4mm width.
- Low drain-source resistance of 2.2 ohms reduces conduction losses.
- High power dissipation capability up to 6 watts for reliable thermal performance.
- Wide operating temperature range from -55°C to 150°C supports industrial environments.
- Typical gate charge of 44.4 nC ensures fast switching speeds.
Product Description
Vishay SI4190ADY-T1-GE3 is a high-performance N-Channel MOSFET transistor suitable for discrete semiconductor applications requiring reliable power switching and amplification. Featuring a maximum continuous drain current of 18 amperes and a drain-source voltage rating of 100 volts, this enhancement mode MOSFET is optimized for medium power electronic circuits.
The device is housed in a compact 8-pin SOIC surface mount package that measures 5 mm in length, 4 mm in width, and 1.5 mm in height, offering easy integration into small footprint PCB designs. Its low drain-source resistance of 2.2 ohms minimizes power losses during conduction, making it efficient for power switching roles.
Designed to dissipate up to 6 watts of power, the transistor supports stable operation under demanding thermal conditions with an operating temperature range from -55°C to 150°C. This broad temperature tolerance makes it suitable for industrial, automotive, and harsh environment applications.
The gate charge of 44.4 nC and maximum gate-source voltage rating of ±20 V facilitate rapid switching speeds and circuit protection, essential for efficient power management. The forward voltage of 1.1 V further enhances device efficiency by reducing voltage drop during conduction.
High continuous drain current of 18 A. Drain-source voltage maximum of 100 V. Enhancement mode operation for effective switching. 8-pin SOIC package for surface mounting. Low drain-source resistance of 2.2 Ω for energy efficiency.
Maximum power dissipation of 6 W ensures reliability. Wide temperature range from -55°C to 150°C. Typical gate charge of 44.4 nC enabling fast switching. Maximum gate-source voltage ±20 V for safety. Forward voltage of 1.1 V reduces loss.
This MOSFET is ideal for applications in electronic components and power connectors, including power supplies, industrial machinery, and automotive semiconductor circuits. Its compact design and robust electrical characteristics ensure dependable performance across a variety of challenges.
Explore Vishay MOSFETs and other discrete semiconductors in the Electronics & Electricals category at EnvMart for cutting-edge industrial and electronic solutions.
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Frequently Asked Questions
The maximum continuous drain current for this model is 18 amperes.
This MOSFET has a maximum drain-source voltage rating of 100 volts.
It is housed in a compact 8-pin SOIC surface mount package.
The low drain-source resistance is 2.2 ohms, which helps reduce conduction losses.
The maximum power dissipation capability is up to 6 watts.
The operating temperature range is from -55°C to 150°C.
The typical gate charge is 44.4 nC, facilitating fast switching speeds.
The maximum gate-source voltage rating is ±20 V.
The forward voltage drop is 1.1 V, which reduces voltage loss during conduction.
The dimensions of the SOIC package are 5 mm in length, 4 mm in width, and 1.5 mm in height.
This model utilizes an N-channel type, which provides efficient switching characteristics.
It is suitable for applications in power supplies, industrial machinery, and automotive semiconductor circuits.
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