$0.88
$0.85
Tax included
Previous
Next
Share
Free Delivery in India | Lowest Global Shipping Charges
24/7 Customer Support
Shop with confidence knowing that our 24/7 Customer Support is always available to assist with any inquiries
Save up to 28% with GST Input
Avail maximum benefits from input tax mechanism on all your Business Invoices. Get GST Invoices on your business purchases. And 0% Taxes on all worldwide deliveries
# Lowest Price Challenge
If you find this product anywhere at lower cost than us. Call us and we will not only match the price but also give a complimentary coupon
100% Original Products
Shop with assurance, as each product we offer is 100% original, ensuring quality and authenticity with every purchase
Vishay ThunderFET N-Channel MOSFET 30 A 80 V Enhancement Mode 8-Pin PowerPAK 1212 SIS468DN-T1-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 1.12mm |
| Length | 3.4mm |
| Model | SIS468DN-T1-GE3 |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | ThunderFET |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerPAK 1212 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 30A |
| Maximum Drain Source Voltage Vds | 80V |
| Maximum Drain Source Resistance Rds | 32mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 52W |
| Typical Gate Charge Qg @ Vgs | 18.1nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.78V |
Key Features
- Capable of handling a maximum continuous drain current of 30 A.
- Maximum drain-source voltage rating of 80 V suitable for medium voltage applications.
- Surface mount device with compact 8-pin PowerPAK 1212 package.
- Enhancement mode N-channel MOSFET with low drain-source resistance of 32 milliohms.
- Supports a maximum power dissipation of 52 W for reliable thermal performance.
- Wide operating temperature range from -55°C minimum to 150°C maximum.
- Typical gate charge of 18.1 nC at gate-source voltage, enabling efficient switching.
- Designed without automotive certifications but suitable for various industrial electronics uses.
Product Description
The Vishay SIS468DN-T1-GE3 is a ThunderFET N-Channel MOSFET designed for medium voltage switching applications. It supports a maximum continuous drain current of 30 A and a maximum drain-source voltage of 80 V. Packaged in a compact 8-pin PowerPAK 1212 surface mount package, this device offers low drain-source resistance of 32 milliohms, making it efficient in power dissipation with a rating of 52 W.
Its channel operates in enhancement mode and the MOSFET features a typical gate charge of 18.1 nC, which aids in rapid switching and efficiency in electronic circuits. The device functions reliably across a wide temperature range of -55°C to 150°C, suitable for diverse industrial and electronic components applications.
This semiconductor component does not comply with automotive standards but is optimized for use in power electronics, power supply boards, and industrial control circuits that require robust switching capabilities.
Key mechanical dimensions include a length and width of 3.4 mm each and a height of 1.12 mm, ensuring suitability for compact PCB layouts. Capable of handling a maximum continuous drain current of 30 A. Maximum drain-source voltage rating of 80 V suitable for medium voltage applications.
Surface mount device with compact 8-pin PowerPAK 1212 package. Enhancement mode N-channel MOSFET with low drain-source resistance of 32 milliohms. Supports a maximum power dissipation of 52 W for reliable thermal performance.
Wide operating temperature range from -55°C minimum to 150°C maximum. Typical gate charge of 18.1 nC at gate-source voltage, enabling efficient switching. Designed without automotive certifications but suitable for various industrial electronics uses.
This product is suited for use in industrial control, power management, electronics manufacturing, and other applications demanding reliable semiconductor switching devices. Browse more from Vishay and find compatible MOSFET devices and electronics components at EnvMart.
Explore more products in our MOSFETs category.
Looking to purchase in bulk?
- Purchase item in bulk quantity
- Get best price for your business
Frequently Asked Questions
The maximum continuous drain current for this model is 30 A.
This MOSFET has a maximum drain-source voltage rating of 80 V, making it suitable for medium voltage applications.
The dimensions of the PowerPAK 1212 package are 3.4 mm in length, 3.4 mm in width, and 1.12 mm in height.
The typical gate charge at gate-source voltage is 18.1 nC, which facilitates efficient switching.
This model supports a maximum power dissipation of 52 W for reliable thermal performance.
The operating temperature range is from -55°C to 150°C, allowing for use in various environments.
The drain-source resistance is 32 milliohms, contributing to its efficiency in power dissipation.
This device is designed for surface mounting, which is suitable for compact PCB layouts.
The channel mode of the SIS468DN-T1-GE3 is enhancement mode, which is typical for N-channel MOSFETs.
This model is suitable for industrial control, power management, and electronics manufacturing applications.
The maximum gate-source voltage for the SIS468DN-T1-GE3 is -20V to +20V.
The forward voltage for this MOSFET is 0.78 V.
Related Products
Other Products from this brand
$1.64
$1.59
-3%
New
Recently Viewed Products
$0.88
$0.85
Save 3%
Tax included
Quantity
Global Payments 140+ Countries
Global Shipping Fedex/UPS/DHL/Aramex/
BlueDart/Delhivery/DP World
24/7 Customer Support Email/Chat/Telephonic Support
Comments (0)
Your review appreciation cannot be sent
Report comment
Report sent
Your report cannot be sent