Vishay Isolated TrenchFET 2 Type P-Channel MOSFET 8 A, 30 V Enhancement, 8-Pin SOIC SI4925DDY-T1-GE3

Vishay SI4925DDY-T1-GE3 is a high-quality isolated TrenchFET 2 type P-Channel MOSFET designed for applications requiring efficient switching and amplification in electronics. It delivers a maximum continuous drain current of 8 amperes and supports a maximum drain-source voltage of 30 volts, making it suitable for various power management tasks.

This device comes in an 8-pin SOIC package designed for surface mounting, aiding compact PCB layouts and automated assembly. The MOSFET operates in enhancement channel mode and has a maximum power dissipation rating of 5 watts, ensuring effective heat management under load.

The transistor features an isolated configuration with dual P-Channel MOSFET elements, enabling reliable performance in analog and digital circuits. Its operating temperature range from -55°C to +150°C supports harsh industrial and commercial environments.

With a maximum drain-source resistance of 41 milliohms, this MOSFET provides low conduction loss, improving power efficiency. The typical gate charge of 32 nC at the specified gate-source voltage ensures fast switching speed with minimal gate drive power consumption. The maximum allowable gate-source voltage ranges between -20 V and +20 V for stable operation.

The physical dimensions are compact with a length of 5 mm, width of 4 mm, and height of 1.5 mm, enabling integration into dense circuit layouts. This component does not carry specific automotive standards, making it ideal for general-purpose electronic and power control applications in laboratory, industrial, and manufacturing settings.

This MOSFET features an 8-pin SOIC surface mount package for space-saving installation. It supports a maximum continuous drain current of 8 A at 30 V drain-source voltage. Enhancement mode operation ensures precise control and switching efficiency.

Typical gate charge of 32 nC facilitates rapid switching response. Wide operating temperature from -55°C to +150°C suits diverse industrial conditions. Low Rds(on) of 41 mΩ minimizes power losses in conduction. Isolated transistor configuration enhances electrical performance.

Dual chip design enables enhanced current handling capacity. Compact dimensions support integration into dense electronics assemblies.

The Vishay SI4925DDY-T1-GE3 P-Channel MOSFET is an excellent choice for power management in industrial controls, electronic devices, HVAC systems, and laboratory equipment. Explore more advanced semiconductor devices in EnvMart’s Electronics & Electricals catalog.