Vishay Isolated TrenchFET 2 Type P-Channel MOSFET, 8 A, 30 V Enhancement Mode, 8-Pin SOIC SI4925DDY-T1-GE3

Vishay SI4925DDY-T1-GE3 Isolated TrenchFET 2 Type P-Channel MOSFET integrates dual P-channel transistors in an 8-Pin SOIC surface-mount package, designed for efficient and reliable power switching applications. It supports a maximum continuous drain current of 8 amperes and withstands drain-source voltages up to 30 volts with enhancement mode operation.

Constructed using Vishay's TrenchFET technology, this MOSFET is optimized for low conduction losses with a maximum drain-source resistance of 41 milliohms, allowing for improved energy efficiency in compact applications.

The device features a typical gate charge of 32 nanocoulombs at the gate-source voltage, enabling fast switching speeds critical for power management and signal control in electronic circuits. Its transistor configuration is isolated, enhancing system design flexibility and minimizing interference.

The MOSFET is packaged in a space-saving 8-pin SOIC form factor, with dimensions measuring 5 mm in length, 4 mm in width, and 1.5 mm in height, suitable for surface mount technology manufacturing processes. It supports a broad operating temperature range from -55°C up to +150°C, making it suitable for demanding industrial, automotive, and commercial electronics environments.

This component is ideal for applications including power management, load switching, and motor control circuits within industrial electronics, telecommunications, and automotive systems, requiring robust, efficient P-channel MOSFET performance.

Features an enhancement mode P-channel MOSFET design for efficient switching. Maximum continuous drain current rated at 8 A for reliable high-current applications. Maximum drain-source voltage of 30 V suitable for moderate power circuits.

Low drain-source resistance of 41 milliohms ensures low conduction losses. Enhanced thermal performance with a maximum power dissipation of 5 W. Wide operating temperature range from -55°C to +150°C supports industrial use.

Compact 8-pin SOIC surface mount package with dimensions 5 mm length, 4 mm width, and 1.5 mm height. Typical gate charge of 32 nanocoulombs at Vgs which aids in fast switching. Isolated transistor configuration with dual P-channel elements per chip.

Maximum gate-source voltage range of -20 V to +20 V for robust gate drive tolerance. Discover more industrial-grade MOSFET components, power semiconductors, and discrete devices in EnvMart’s comprehensive Electronics & Electricals catalog.