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onsemi Type P-Channel MOSFET, 3.5 A, 30 V Enhancement, 3-Pin SOT-23 NTR4171PT1G

Category MOSFET Brand onsemi Condition New

Specifications

Country of Origin India
Brand onsemi
Height 1.01mm
Length 3.04mm
Model NTR4171PT1G
Width 1.4mm
Mount Type Surface
Maximum Operating Temperature 150°C
Package Type SOT-23
Minimum Operating Temperature -55°C
Pin Count 3
Channel Type Type P
Maximum Continuous Drain Current Id 3.5A
Maximum Drain Source Voltage Vds 30V
Maximum Drain Source Resistance Rds 150mΩ
Channel Mode Enhancement
Maximum Power Dissipation Pd 1.25W
Typical Gate Charge Qg @ Vgs 15.6nC
Maximum Gate Source Voltage Vgs -12, +12V
Forward Voltage Vf -1.2V
P-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 onsemi NTR4171PGBrand ON Semiconductor

Key Features

  • This MOSFET supports a maximum continuous drain current of 3.5 A.
  • The maximum drain-source voltage is rated at 30 volts.
  • The device uses an enhancement channel mode.
  • SOT-23 package type with 3 pins facilitates surface mounting.
  • Maximum power dissipation is 1.25 W.
  • Maximum drain-source resistance of 150 milliohms.
  • Typical gate charge of 15.6 nC at gate voltage.
  • Forward voltage of -1.2 V.

Product Description

onsemi NTR4171PT1G is a Type P-Channel MOSFET designed for semiconductor and power management applications. It supports a continuous drain current of 3.5 A with a maximum drain-source voltage of 30 V, making it suitable for low to medium power circuits. Packaged in a compact 3-pin SOT-23 form factor, the MOSFET is ideal for surface mounting on printed circuit boards requiring space efficiency.

The device operates in enhancement mode, providing reliable switching performance with a low maximum drain-source resistance of 150 mΩ, which ensures minimal conduction losses in power-sensitive electronics. It dissipates up to 1.25 watts of power and is rated for operation across a broad temperature range from -55°C to 150°C, catering to industrial and commercial environments.

Key electrical characteristics include a typical gate charge of 15.6 nC at the gate-source voltage, allowing for fast switching. The maximum gate-source voltage of +/-12 V protects the device from gate stress, while the forward voltage of -1.2 V contributes to efficient circuit operation.

This product finds utility in diverse applications such as power supplies, motor control circuits, voltage regulation modules, and other electronics requiring efficient MOSFET performance with small footprint packaging.

This MOSFET supports a maximum continuous drain current of 3.5 A. The maximum drain-source voltage is rated at 30 volts. The device uses an enhancement channel mode. SOT-23 package type with 3 pins facilitates surface mounting.

Maximum power dissipation is 1.25 W. Operating temperature range: -55°C to 150°C. Maximum drain-source resistance of 150 milliohms. Typical gate charge of 15.6 nC at gate voltage. Maximum gate-source voltage: -12 to +12 volts.

Forward voltage of -1.2 V. Engineered for industrial, laboratory, and commercial electronics, this MOSFET delivers consistent performance and durability in power-sensitive circuits. Explore other semiconductor devices and power components at EnvMart for a comprehensive range of electronics solutions.

onsemi Type P-Channel MOSFET, 3.5 A, 30 V Enhancement, 3-Pin SOT-23 NTR4171PT1G
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Frequently Asked Questions

The maximum continuous drain current for this model is 3.5 A.

It has a maximum drain-source voltage rating of 30 V.

This MOSFET is packaged in a 3-pin SOT-23 type, suitable for surface mounting.

The maximum power dissipation for this model is 1.25 W.

The maximum drain-source resistance is rated at 150 milliohms.

The typical gate charge is 15.6 nC at the gate-source voltage.

It operates within a temperature range of -55°C to 150°C.

The maximum gate-source voltage is rated at -12 V to +12 V.

The forward voltage is rated at -1.2 V.

This model uses a Type P channel in enhancement mode.

The dimensions are 3.04 mm in length, 1.4 mm in width, and 1.01 mm in height.

This MOSFET can be used in power supplies, motor control circuits, and voltage regulation modules.

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