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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1.01mm |
| Length | 3.04mm |
| Model | NTR4171PT1G |
| Width | 1.4mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 150mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.25W |
| Typical Gate Charge Qg @ Vgs | 15.6nC |
| Maximum Gate Source Voltage Vgs | -12, +12V |
| Forward Voltage Vf | -1.2V |
| P-Channel MOSFET, 3.5 A, 30 V, 3-Pin SOT-23 onsemi NTR4171PGBrand | ON Semiconductor |
onsemi NTR4171PT1G is a Type P-Channel MOSFET designed for semiconductor and power management applications. It supports a continuous drain current of 3.5 A with a maximum drain-source voltage of 30 V, making it suitable for low to medium power circuits. Packaged in a compact 3-pin SOT-23 form factor, the MOSFET is ideal for surface mounting on printed circuit boards requiring space efficiency.
The device operates in enhancement mode, providing reliable switching performance with a low maximum drain-source resistance of 150 mΩ, which ensures minimal conduction losses in power-sensitive electronics. It dissipates up to 1.25 watts of power and is rated for operation across a broad temperature range from -55°C to 150°C, catering to industrial and commercial environments.
Key electrical characteristics include a typical gate charge of 15.6 nC at the gate-source voltage, allowing for fast switching. The maximum gate-source voltage of +/-12 V protects the device from gate stress, while the forward voltage of -1.2 V contributes to efficient circuit operation.
This product finds utility in diverse applications such as power supplies, motor control circuits, voltage regulation modules, and other electronics requiring efficient MOSFET performance with small footprint packaging.
This MOSFET supports a maximum continuous drain current of 3.5 A. The maximum drain-source voltage is rated at 30 volts. The device uses an enhancement channel mode. SOT-23 package type with 3 pins facilitates surface mounting.
Maximum power dissipation is 1.25 W. Operating temperature range: -55°C to 150°C. Maximum drain-source resistance of 150 milliohms. Typical gate charge of 15.6 nC at gate voltage. Maximum gate-source voltage: -12 to +12 volts.
Forward voltage of -1.2 V. Engineered for industrial, laboratory, and commercial electronics, this MOSFET delivers consistent performance and durability in power-sensitive circuits. Explore other semiconductor devices and power components at EnvMart for a comprehensive range of electronics solutions.
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