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| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 20.7mm |
| Length | 39.37mm |
| Model | MJ4502G |
| Width | 26.67mm |
| Mount Type | Through Hole |
| Maximum Operating Temperature | 200°C |
| Package Type | TO-204 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 2 |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Minimum DC Current Gain hFE | 25 |
| Transistor Polarity | PNP |
| Maximum Emitter Base Voltage VEBO | 4V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Power Dissipation Pd | 200W |
| Maximum DC Collector Current Idc | 30A |
| Transistor Configuration | Single |
| Maximum Transition Frequency ft | 1MHz |
onsemi MJ4502G Power PNP Transistor delivers robust performance for industrial and electronic applications requiring high current and voltage handling capabilities. Its 30 ampere maximum DC collector current rating and 100-volt collector emitter voltage rating make it suitable for power switching and amplification in circuits operating under demanding electrical loads.
The transistor comes in a TO-204 package, designed for through-hole mounting, providing secure mechanical and thermal stability in assemblies. Featuring a single transistor configuration with PNP polarity, this component facilitates efficient current flow control in PNP circuits.
With a maximum power dissipation of 200 watts, this transistor manages significant power loads without thermal failure, supported by its wide operational temperature range from -65°C to 200°C, enabling reliability in harsh environmental conditions.
The MJ4502G’s minimum DC current gain (hFE) of 25 ensures consistent signal amplification, while the maximum emitter base voltage of 4 volts provides operational safety margins. Its transition frequency of 1 MHz suits switching applications requiring fast response times.
Physical dimensions include a height of 20.7 mm, length of 39.37 mm, and width of 26.67 mm, supporting integration in various electronic equipment layouts. This transistor is ideal for industrial, manufacturing, and power management applications.
Designed primarily for through-hole assembly in power electronic circuits. Allows reliable operation in automotive and general electronic devices not requiring AEC-Q101 automotive standard compliance. Suitable for laboratory testing, prototyping, and production environments where high current and voltage transistor components are required.
Explore more Power Transistors and related semiconductor products at EnvMart for comprehensive industrial and electronic solutions.
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