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onsemi Type P-Channel MOSFET 1.9 A 30 V Enhancement Surface Mount 3-Pin SOT-23 NTR4502PT1G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 1mm |
| Length | 2.9mm |
| Model | NTR4502PT1G |
| Width | 1.3mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 1.9A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 350mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.25W |
| Typical Gate Charge Qg @ Vgs | 6nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- Enhancement mode Type P-Channel MOSFET in surface mount 3-Pin SOT-23 package.
- 1.9 A maximum continuous drain current with 30 V drain source voltage rating.
- Low maximum drain source resistance of 350 milliohms for efficient switching.
- Operating temperature range from -55°C up to 150°C for robust applications.
- Maximum power dissipation of 1.25 watts ensures reliable performance under load.
- Typical gate charge of 6 nanocoulombs enables fast switching capabilities.
- Compact package dimensions of 2.9 mm length, 1.3 mm width, and 1 mm height.
- Maximum gate source voltage rating from -20 V to +20 V for flexible control.
Product Description
onsemi NTR4502PT1G is a high-quality Type P-Channel MOSFET designed for surface mount technology with a compact 3-Pin SOT-23 package. Rated for a maximum continuous drain current of 1.9 amperes and drain source voltage of 30 volts, this device is suitable for efficient power switching in electronic circuits.
The enhancement mode operation enables reliable performance in a wide temperature range extending from -55°C to 150°C. Its low maximum drain source resistance of 350 milliohms minimizes power loss, making it suitable for battery-powered and energy-sensitive applications.
Featuring a maximum power dissipation of 1.25 watts and typical gate charge of 6 nanocoulombs, this MOSFET supports fast switching speeds and robust operation. The device's dimensions of 2.9 mm length, 1.3 mm width, and 1 mm height optimize PCB space usage and facilitate automated assembly.
This component is designed to operate with a maximum gate source voltage range from -20 volts to +20 volts, providing flexibility in diverse control and driver circuits. The surface mount SOT-23 package ensures compatibility with modern manufacturing processes.
This MOSFET is widely applicable in power management, signal switching, electronic control systems, and amplification devices. Its robust thermal and electrical ratings make it suitable for industrial electronics, communications equipment, automotive control units, and consumer electronics.
The compact SOT-23 footprint enables integration into dense circuit layouts where space constraints are critical. Manufactured to meet stringent quality standards, ensuring consistent performance and reliability. Ideal for engineers and system designers seeking a reliable power transistor for surface mount applications.
Choose this onsemi Type P-Channel MOSFET NTR4502PT1G for high-performance, compact, and efficient switching applications. Explore more semiconductor and MOSFET products on EnvMart for your industrial and commercial electronics needs.
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Frequently Asked Questions
The maximum continuous drain current for the NTR4502PT1G is 1.9 A.
This model has a maximum drain source voltage rating of 30 V.
The typical gate charge for the NTR4502PT1G is 6 nanocoulombs.
It operates within a temperature range from -55°C to 150°C.
The dimensions of the SOT-23 package are 2.9 mm in length, 1.3 mm in width, and 1 mm in height.
The maximum power dissipation is 1.25 watts.
The maximum gate source voltage rating is from -20 V to +20 V.
The maximum drain source resistance is 350 milliohms.
This model has 3 pins.
It features a Type P channel.
The NTR4502PT1G uses a surface mount type.
The country of origin for this MOSFET is India.
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