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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.1mm |
| Length | 5.1mm |
| Model | DMP4015SPS |
| Width | 6mm |
| Mount Type | Surface |
| Series | DMP4015SPS |
| Maximum Operating Temperature | 150°C |
| Package Type | PowerDI5060 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Automotive Standard | AEC-Q101 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 11A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 15mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.1W |
| Typical Gate Charge Qg @ Vgs | 47.5nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | -1V |
DiodesZetex DMP4015SPS is a P-Channel MOSFET transistor designed for high-efficiency switching applications. Featuring a compact 8-pin PowerDI5060 package, it supports surface mounting on printed circuit boards, making it suitable for a broad range of electronic and industrial equipment.
This enhancement mode MOSFET delivers a maximum continuous drain current of 11 A and can withstand drain-source voltages up to 40 V, making it ideal for power management circuits, automotive electronics, and industrial controls requiring robust performance under demanding conditions.
With a typical gate charge of 47.5 nC and low on-resistance of 15 milliohms, it provides efficient switching characteristics, reducing power losses and thermal generation. The device can safely operate at temperatures ranging from -55°C to 150°C, ensuring durability across diverse environments. The automotive standard AEC-Q101 certification highlights its suitability for automotive system integration.
Physical dimensions of the MOSFET include a length of 5.1 mm, width of 6 mm, and height of 1.1 mm, optimizing the footprint for compact design layouts. Typical forward voltage is -1 V. The component is manufactured in China with rigorous quality and compliance standards.
Features an 8-pin PowerDI5060 package for compact design integration. Operates with a maximum continuous drain current of 11 amperes. Maximum drain-source voltage rating of 40 volts. Channel mode is enhancement, offering improved switching performance.
Maximum power dissipation is rated at 2.1 watts for reliable thermal management. Supports a maximum operating temperature up to 150°C for industrial use. Typical gate charge is 47.5 nanocoulombs at specified gate voltage.
Meets automotive industry standard AEC-Q101 ensuring quality and reliability. Compact dimensions include 5.1 mm length, 6 mm width, and 1.1 mm height. Manufactured in China under strict quality control.
This P-Channel MOSFET is widely used in industrial, automotive, and consumer electronics for efficient power switching and voltage regulation tasks. It is ideal for PCB power management solutions, enhancing device longevity and performance. For use in industries including manufacturing, automotive electronics, and power control systems, it assures robust operation and compliance with stringent specifications.
Explore more high-quality semiconductors and discrete components in the EnvMart catalog for your electronic design and production needs.
Explore more products in our Power MOSFET category.
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