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STMicroelectronics MDmesh N-Channel Power MOSFET 5 A 600 V Enhancement 3-Pin IPAK (TO-251) STU7NM60N
Specifications
| Country of Origin | India |
|---|---|
| Brand | STMicroelectronics |
| Height | 6.9mm |
| Length | 6.6mm |
| Model | STU7NM60N |
| Width | 2.4mm |
| Mount Type | Through Hole |
| Series | MDmesh |
| Maximum Operating Temperature | 150°C |
| Package Type | IPAK (TO-251) |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | ECOPACK |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 5A |
| Maximum Drain Source Voltage Vds | 600V |
| Maximum Drain Source Resistance Rds | 0.9Ω |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 45W |
| Typical Gate Charge Qg @ Vgs | 14nC |
| Maximum Gate Source Voltage Vgs | -25, +25V |
| Forward Voltage Vf | 1.3V |
Key Features
- The transistor uses MDmesh technology ensuring low resistance and high efficiency.
- The IPAK (TO-251) package supports through-hole mounting for easy PCB integration.
- Enhancement mode channel type enables reliable switching operations.
- Maximum power dissipation rating of 45W supports robust industrial use.
- Operating temperature range from -55°C to 150°C ensures performance in varied conditions.
- Gate charge is low at 14nC, providing fast switching capabilities.
- Features typical forward voltage of 1.3V and maximum gate-source voltage of ±25V.
- Compact dimensions with height 6.9mm, length 6.6mm, and width 2.4mm optimize PCB space.
Product Description
STMicroelectronics STU7NM60N is a high-performance MDmesh N-Channel Power MOSFET designed for efficient power management in industrial and electronic applications. Featuring a maximum continuous drain current of 5 A combined with a maximum drain-source voltage of 600 V, it delivers robust switching performance suitable for demanding environments.
The transistor is in a compact IPAK (TO-251) three-pin package optimized for through-hole mounting, ensuring ease of installation and durable operation in power circuits. It employs enhancement mode channel technology for reliable control and switching efficiency.
This device supports a maximum power dissipation of 45 W, enabling it to manage significant thermal loads during operation. It can operate safely within a temperature range from -55°C to 150°C, making it suitable for applications in automotive, industrial, and power supply environments.
Its low typical gate charge of 14 nC and maximum gate-source voltage of ±25 V allow fast switching speeds and protect against gate voltage surges. The forward voltage drop of 1.3 V helps minimize losses during conduction phases.
With compact dimensions of 6.9 mm height, 6.6 mm length, and 2.4 mm width, this MOSFET offers an efficient footprint for PCB layout optimizing space without sacrificing performance. Compliance with ECOPACK standards ensures that the device meets environmental safety and sustainability criteria.
The MDmesh technology reduces conduction losses, improving power efficiency. Suitable for a wide range of industrial and commercial power switching applications. Robust thermal and electrical specifications provide reliability under various load conditions.
Ideal for use in power supplies, motor controls, and power converters. Through-hole package design facilitates mechanical stability in assembly.
This Power MOSFET from STMicroelectronics provides a balance of high electrical performance, compact packaging, and environmental compliance, making it a preferred choice in advanced electronic designs. Browse the Electronics & Electricals category to explore more power semiconductor components by STMicroelectronics and other leading brands on EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 5 A.
It supports a maximum drain-source voltage of 600 V.
The maximum power dissipation rating is 45 W.
The dimensions are 6.9 mm in height, 6.6 mm in length, and 2.4 mm in width.
It operates within a temperature range from -55°C to 150°C.
This model comes in an IPAK (TO-251) package designed for through-hole mounting.
The typical gate charge is 14 nC.
The maximum gate-source voltage is ±25 V.
The forward voltage drop is typically 1.3 V.
It utilizes MDmesh technology to ensure low resistance and high efficiency.
The channel type is N-channel, employing enhancement mode technology.
It complies with ECOPACK standards, ensuring environmental safety and sustainability.
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