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Infineon OptiMOS 3 N-Channel MOSFET 40 A 40 V Enhancement 8-Pin TSDSON BSZ097N04LSGATMA1
Specifications
| Country of Origin | India |
|---|---|
| Brand | Infineon |
| Height | 1.1mm |
| Length | 3.4mm |
| Model | BSZ097N04LSGATMA1 |
| Width | 3.4mm |
| Mount Type | Surface |
| Series | OptiMOS 3 |
| Maximum Operating Temperature | 150°C |
| Package Type | TSDSON |
| Minimum Operating Temperature | -55°C |
| Pin Count | 8 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 40A |
| Maximum Drain Source Voltage Vds | 40V |
| Maximum Drain Source Resistance Rds | 14.2mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 35W |
| Typical Gate Charge Qg @ Vgs | 18nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1.2V |
Key Features
- The MOSFET features a low on-resistance of 14.2 milliohms for enhanced efficiency.
- It has a maximum power dissipation rating of 35 watts suitable for demanding applications.
- Operating temperature range spans from -55°C to 150°C for robust performance.
- Typical gate charge is 18 nanocoulombs at Vgs, enabling fast switching speeds.
- The device includes protection with a gate-source voltage maximum of -20 to +20 volts.
- Compact dimensions of 3.4 mm by 3.4 mm by 1.1 mm height allow space-saving PCB layouts.
- Surface mount TSDSON package with 8 pins supports efficient thermal and electrical characteristics.
- This MOSFET is well-suited for switching mode power supplies and DC/DC converter applications.
Product Description
Infineon BSZ097N04LSGATMA1 is an OptiMOS 3 N-Channel Enhancement Mode MOSFET designed for efficient power management in electronic circuits. This transistor supports a maximum continuous drain current of 40 amperes and a drain-source voltage of 40 volts, housed within a compact 8-pin TSDSON surface-mount package measuring 3.4 mm in length and width, and 1.1 mm in height.
Its low on-resistance of 14.2 milliohms contributes to reduced conduction losses, making it ideal for high efficiency DC/DC converters, switching mode power supplies, and electronic devices requiring compact thermal design. The device operates effectively in temperatures ranging from minus 55°C to 150°C, supporting reliable function across industrial and commercial environments.
The typical gate charge of 18 nanocoulombs and a maximum gate-source voltage rating between -20 and +20 volts offer excellent switching performance and reliability. This MOSFET incorporates lead-free and RoHS-compliant materials, aligning with modern environmental standards.
Infineon’s OptiMOS 3 series delivers advanced power MOSFET technology that meets stringent energy efficiency demands and power density requirements for next-generation computing and industrial control applications. The 8-pin TSDSON form factor allows integration into dense PCB layouts without compromising electrical or thermal performance.
The MOSFET features a low on-resistance of 14.2 milliohms for improved energy efficiency. Maximum power dissipation rating of 35 watts suits demanding electronic circuits. Wide operating temperature range from -55°C to 150°C ensures durability.
Fast switching capability enabled by a typical gate charge of 18 nanocoulombs. Maximum gate-source voltage limits of -20 to +20 volts protect device integrity. Compact 8-pin TSDSON surface-mount package for space-saving PCB integration.
RoHS-compliant with lead-free plating contributing to safer environments. Ideal for power management in switching mode power supplies and DC/DC converters.
Infineon OptiMOS 3 N-Channel MOSFETs like the BSZ097N04LSGATMA1 are preferred components in industrial, automotive, telecommunications, and computing power regulation applications. Their design prioritizes efficiency, size, and reliability to meet the challenges of modern electronic systems.
Explore featured OptiMOS 3 MOSFETs and other semiconductor components with EnvMart for your next engineering project or production line enhancement.
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Frequently Asked Questions
The maximum continuous drain current for this model is 40 amperes.
This MOSFET has a maximum drain-source voltage rating of 40 volts.
The typical gate charge at Vgs is 18 nanocoulombs.
It features a low on-resistance of 14.2 milliohms, which enhances efficiency.
The maximum power dissipation rating is 35 watts, suitable for demanding applications.
The operating temperature range spans from -55°C to 150°C.
This MOSFET comes in an 8-pin TSDSON surface-mount package.
The dimensions are 3.4 mm in length, 3.4 mm in width, and 1.1 mm in height.
The maximum gate-source voltage is rated between -20 to +20 volts.
This model is well-suited for switching mode power supplies and DC/DC converter applications.
Yes, it incorporates lead-free and RoHS-compliant materials, aligning with modern environmental standards.
It features an N-channel type, designed for enhancement mode operation.
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