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Infineon CoolMOS C3 N-Channel Power Transistor 11 A 800 V Enhancement 3-Pin TO-220FP SPA11N80C3XKSA1

Category Power Transistor Brand Infineon Condition New

Specifications

Country of Origin India
Brand Infineon
Height 9.83mm
Length 10.65mm
Model SPA11N80C3XKSA1
Width 4.85mm
Mount Type Through Hole
Series CoolMOS C3
Maximum Operating Temperature 150°C
Package Type TO-220FP
Minimum Operating Temperature -55°C
Standards/Approvals JEDEC, RoHS
Pin Count 3
Channel Type N
Maximum Continuous Drain Current Id 11A
Maximum Drain Source Voltage Vds 800V
Maximum Drain Source Resistance Rds 0.45Ω
Channel Mode Enhancement
Maximum Power Dissipation Pd 34W
Typical Gate Charge Qg @ Vgs 64nC
Maximum Gate Source Voltage Vgs -20, +20V
Forward Voltage Vf 1.2V

Key Features

  • High-performance CoolMOS C3 series power MOSFET suitable for power applications.
  • Maximum continuous drain current of 11 amperes ensures reliable operation.
  • 800 V maximum drain-source voltage for robust power handling.
  • Enhancement mode channel provides efficient switching behavior.
  • Low maximum drain-source resistance of 0.45 ohms reduces power losses.
  • Maximum power dissipation of 34 watts supports demanding thermal conditions.
  • Through hole mounting and 3-pin configuration for easy PCB integration.
  • Wide operating temperature range from -55°C to 150°C for diverse environments.

Product Description

Infineon SPA11N80C3XKSA1 is a CoolMOS C3 N-Channel Power MOSFET designed for efficient power switching and management. Operating at a maximum continuous drain current of 11 A and a maximum drain-source voltage of 800 V, this transistor supports high-performance industrial and electronic applications. The enhancement mode channel offers excellent switching performance with a low maximum drain-source resistance of 0.45 ohms reducing conduction losses.

This device is housed in a 3-pin TO-220FP package measuring 10.65 mm in length, 9.83 mm in height, and 4.85 mm in width, enabling straightforward through-hole mounting on printed circuit boards. It tolerates a wide temperature range, from -55°C minimum up to 150°C maximum operating temperature, making it suitable for diverse environments including industrial controls, power supplies, and automotive electronics.

The CoolMOS C3 series is recognized for delivering efficiency, compact size, and cost-effectiveness in power semiconductor solutions. This model complies with JEDEC and RoHS standards, ensuring compliance with industry quality and environmental regulations but is not automotive qualified.

Key electrical characteristics include a typical gate charge of 64 nC at Vgs and a maximum gate-source voltage rating of -20 to +20 V. The forward voltage drop is approximately 1.2 V, optimizing power efficiency further.

This Power Transistor is ideal for use in industrial, laboratory, manufacturing, and commercial power electronics systems requiring reliable, high-efficiency MOSFET components. High-performance CoolMOS C3 series power MOSFET suitable for power applications.

Maximum continuous drain current of 11 amperes ensures reliable operation. 800 V maximum drain-source voltage for robust power handling. Enhancement mode channel provides efficient switching behavior. Low maximum drain-source resistance of 0.45 ohms reduces power losses.

Maximum power dissipation of 34 watts supports demanding thermal conditions. Through hole mounting and 3-pin configuration for easy PCB integration. Wide operating temperature range from -55°C to 150°C for diverse environments.

Complies with JEDEC and RoHS standards for quality and environmental care. Compact TO-220FP package with dimensions approximately 10.65 mm length and 4.85 mm width.

Explore more high-quality power semiconductor products like this Infineon CoolMOS C3 transistor in EnvMart’s Electronics & Electricals category for industrial, laboratory, and commercial applications.

Infineon CoolMOS C3 N-Channel Power Transistor 11 A 800 V Enhancement 3-Pin TO-220FP SPA11N80C3XKSA1
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Frequently Asked Questions

The maximum continuous drain current of this model is 11 A.

It has a maximum drain-source voltage of 800 V.

This power transistor is housed in a TO-220FP package.

The maximum power dissipation is rated at 34 W.

It features a maximum drain-source resistance of 0.45 ohms.

The operating temperature range is from -55°C to 150°C.

It uses an enhancement mode N-channel configuration.

The typical gate charge at Vgs is 64 nC.

The dimensions are approximately 10.65 mm in length, 9.83 mm in height, and 4.85 mm in width.

The maximum gate-source voltage rating is -20 V to +20 V.

It complies with JEDEC and RoHS standards.

It is suitable for industrial, laboratory, manufacturing, and commercial power electronics systems.

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