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DiodesZetex Small Signal PNP Transistor 600 mA, 60 V, 3-Pin SOT-323 MMST2907A-7-F

Category Bipolar Transistor Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.1mm
Length 2.2mm
Model MMST2907A-7-F
Width 2.2mm
Mount Type Surface
Series MMST
Maximum Operating Temperature 150°C
Package Type SOT-323
Minimum Operating Temperature -55°C
Pin Count 3
Maximum Collector Emitter Voltage Vceo -60V
Minimum DC Current Gain hFE 50
Transistor Polarity PNP
Maximum Emitter Base Voltage VEBO -5V
Maximum Collector Base Voltage VCBO -60V
Automotive Standard AEC-Q101
Maximum Power Dissipation Pd 200mW
Maximum DC Collector Current Idc -600mA
Transistor Configuration Single
Maximum Transition Frequency ft 200MHz

Key Features

  • Small signal PNP transistor designed for surface mounting applications.
  • Maximum collector current of 600 milliamps ensuring adequate current handling.
  • Maximum collector-emitter voltage rating of 60 volts for medium voltage switching.
  • Surface mount technology compatible SOT-323 package with 3 pins.
  • Maximum power dissipation up to 200 milliwatts for reliable operation.
  • Minimum DC current gain (hFE) of 50 for amplification efficiency.
  • Operates reliably across a temperature range from -55°C to 150°C.
  • High transition frequency of up to 200 MHz suitable for high-speed switching.

Product Description

DiodesZetex MMST2907A-7-F is a small signal PNP Bipolar Transistor designed for discrete semiconductor applications. Featuring a collector current rating of 600 mA and a collector-emitter voltage of 60 V, this transistor is housed in a compact 3-pin SOT-323 surface mount package suitable for high-density PCB layouts.

The transistor offers a maximum power dissipation of 200 mW and a minimum DC current gain (hFE) of 50, making it suitable for amplification purposes in electronic circuits. It operates efficiently over a broad temperature range from -55°C ambient conditions up to 150°C maximum operating temperature, ensuring durability in harsh environments.

Its transition frequency of 200 MHz supports applications requiring high-speed switching and signal processing. The MMST2907A-7-F meets the automotive AEC-Q101 standard, confirming its reliability for automotive electronics and industrial use.

Package dimensions measure 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height, making it ideal for compact electronic devices. The transistor's surface mount technology (SMT) package facilitates automated assembly and production efficiency.

This PNP transistor is commonly used in industrial control circuits, automotive electronics, and other commercial and manufacturing applications requiring reliable small signal amplification.

Small signal PNP transistor designed for surface mounting applications. Maximum collector current of 600 milliamps ensuring adequate current handling. Maximum collector-emitter voltage rating of 60 volts for medium voltage switching.

Surface mount technology compatible SOT-323 package with 3 pins. Maximum power dissipation up to 200 milliwatts for reliable operation. Minimum DC current gain (hFE) of 50 for amplification efficiency. Operates reliably across a temperature range from -55°C to 150°C.

High transition frequency of up to 200 MHz suitable for high-speed switching. Complies with automotive standard AEC-Q101 ensuring automotive-grade quality. Compact dimensions of 2.2 x 2.2 x 1.1 mm for space-constrained designs.

Explore more discrete semiconductor components like transistors, diodes, and related electronic parts at EnvMart to enhance your industrial, automotive, or electronic design projects.

DiodesZetex Small Signal PNP Transistor 600 mA, 60 V, 3-Pin SOT-323 MMST2907A-7-F
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Frequently Asked Questions

The maximum collector current for this model is 600 milliamps.

The collector-emitter voltage rating is 60 volts, suitable for medium voltage switching applications.

It uses a surface mount technology compatible SOT-323 package with 3 pins.

The maximum power dissipation is 200 milliwatts, ensuring reliable operation.

The minimum DC current gain (hFE) is 50, which supports amplification efficiency.

It operates reliably across a temperature range from -55°C to 150°C.

The transition frequency is up to 200 MHz, making it suitable for high-speed switching applications.

The dimensions are 2.2 mm in length, 2.2 mm in width, and 1.1 mm in height.

It complies with the automotive standard AEC-Q101, confirming its reliability for automotive applications.

The maximum emitter-base voltage (VEBO) rating is -5 volts.

The transistor configuration is single, designed for discrete semiconductor applications.

The maximum collector-base voltage (VCBO) is -60 volts.

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