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DiodesZetex Isolated Dual Type P, Type N-Channel Power MOSFET, 8.5 A, 30 V Enhancement Mode, 8-Pin SOIC DMC3021LSD-13
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1.5mm |
| Length | 4.95mm |
| Model | DMC3021LSD-13 |
| Width | 3.95mm |
| Mount Type | Surface |
| Maximum Operating Temperature | +150°C |
| Package Type | SOIC |
| Minimum Operating Temperature | -55°C |
| Standards/Approvals | AEC-Q101, RoHS, MIL-STD-202, J-STD-020, UL 94V-0 |
| Pin Count | 8 |
| Number of Elements per Chip | 2 |
| Automotive Standard | AEC-Q200, AEC-Q100, AEC-Q101 |
| Channel Type | Type P, Type N |
| Maximum Continuous Drain Current Id | 8.5A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 53mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 2.5W |
| Typical Gate Charge Qg @ Vgs | 7.8nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 0.7V |
| Transistor Configuration | Isolated |
Key Features
- Handles a maximum continuous drain current of 8.5 amperes.
- Operates with a maximum drain to source voltage of 30 volts.
- Incorporates enhancement mode transistors with low drain-source resistance of 53 milliohms.
- Capable of dissipating power up to 2.5 watts safely.
- Designed to operate over a temperature range from -55°C to +150°C.
- Features a typical gate charge of 7.8 nanocoulombs at Vgs.
- Has a maximum gate-to-source voltage rating of ±20 volts.
- Compact dimensions with 1.5 mm height, 4.95 mm length, and 3.95 mm width in an SOIC mounting type.
Product Description
DiodesZetex DMC3021LSD-13 is a high-performance isolated dual power MOSFET combining both Type P and Type N channel transistors within a compact 8-pin SOIC surface-mount package designed for versatile power electronic applications.
This device supports a maximum continuous drain current of 8.5 A and a maximum drain-source voltage of 30 V, making it suitable for efficient switching and amplification in power management circuits.
The enhancement mode operation ensures low on-resistance of 53 milliohms, minimizing conduction losses and heat generation, further supported by a maximum power dissipation of 2.5 W. The MOSFETs feature a gate charge of 7.8 nC and a maximum gate-source voltage of ±20 V, enhancing control precision.
Designed for robustness, the device operates safely across a wide temperature range from -55°C up to +150°C. Its compact form factor with dimensions 4.95 mm length, 3.95 mm width, and 1.5 mm height facilitates efficient PCB layout in dense industrial, automotive, and consumer electronic systems.
The DMC3021LSD-13 complies with critical industry standards including AEC-Q101 automotive qualification, RoHS environmental regulations, MIL-STD-202 military testing, J-STD-020, and UL 94V-0 flame retardancy, ensuring high reliability and durability for demanding applications.
Handles a maximum continuous drain current of 8.5 amperes. Operates with a maximum drain to source voltage of 30 volts. Incorporates enhancement mode transistors with low drain-source resistance of 53 milliohms. Capable of dissipating power up to 2.5 watts safely.
Designed to operate over a temperature range from -55°C to +150°C. Features a typical gate charge of 7.8 nanocoulombs at Vgs. Has a maximum gate-to-source voltage rating of ±20 volts. Compact dimensions with 1.5 mm height, 4.95 mm length, and 3.95 mm width in an SOIC mounting type.
Meets stringent standards including AEC-Q101, RoHS, MIL-STD-202, J-STD-020, and UL 94V-0.
This MOSFET is ideal for applications in automotive electronics, industrial equipment, power supplies, and consumer devices requiring reliable, high-speed switching and low thermal losses.
Explore more Power MOSFETs within the Electronics & Electricals category on EnvMart for diverse solutions tailored to your project requirements.
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Frequently Asked Questions
The maximum continuous drain current for this model is 8.5 amperes.
It operates with a maximum drain-source voltage of 30 volts.
The typical gate charge is 7.8 nanocoulombs at Vgs.
This model is designed to operate over a temperature range from -55°C to +150°C.
It can safely dissipate power up to 2.5 watts.
The dimensions are 4.95 mm in length, 3.95 mm in width, and 1.5 mm in height.
It comes in an 8-pin SOIC surface-mount package.
It complies with AEC-Q101, RoHS, MIL-STD-202, J-STD-020, and UL 94V-0 standards.
The maximum gate-to-source voltage rating is ±20 volts.
It has a low drain-source resistance of 53 milliohms.
This model contains 2 elements per chip.
It features both Type P and Type N channel transistors.
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