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DiodesZetex Silicon Junction Switching Diode 300 mA 6-Pin SC-88 75 V BAV756DW-7-F

Category Switching Diodes Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1mm
Length 2.2mm
Model BAV756DW-7-F
Width 1.35mm
Mount Type Surface
Series BAV756DW
Maximum Operating Temperature 150°C
Package Type SC-88
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 6
Maximum Power Dissipation Pd 200mW
Peak Non-Repetitive Forward Surge Current Ifsm 2A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 4ns
Maximum Forward Current If 300mA
Maximum Peak Reverse Repetitive Voltage Vrrm 75V

Key Features

  • This diode has a compact 6-pin SC-88 surface mount package for efficient PCB integration.
  • It features a maximum power dissipation of 200 mW rated for reliable operation.
  • With a fast peak reverse recovery time of 4 ns, it is suitable for high-speed switching applications.
  • The maximum forward voltage is 1.25 V under rated current to minimize losses.
  • Operating temperature ranges from -65°C to 150°C to withstand harsh industrial environments.
  • Peak non-repetitive forward surge current is 2 A, ensuring transient robustness.
  • Small physical dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height support compact device design.
  • Manufactured in China, the diode is supplied as new and ready for surface mounting.

Product Description

DiodesZetex BAV756DW-7-F is a high-performance silicon junction switching diode designed for compact and efficient electronic circuits requiring fast switching capabilities. This surface mount diode is packaged in a 6-pin SC-88 form factor, providing easy integration on printed circuit boards with minimal space requirements.

It supports a maximum forward current of 300 mA and a peak reverse voltage of 75 V, making it ideal for low power switching and signal processing applications in industrial, automotive, and consumer electronics sectors.

The diode features a low forward voltage drop of 1.25 V and a peak reverse recovery time of just 4 nanoseconds, enabling high-speed switching with minimal signal distortion and power loss.

It is rated for 200 mW maximum power dissipation and can operate reliably over a wide temperature range from -65°C up to 150°C, suitable for harsh and variable environmental conditions.

Additionally, the diode can withstand a peak non-repetitive forward surge current of up to 2 A, providing resilience against transient current spikes during device operation. Its miniature size, with a length of 2.2 mm, width of 1.35 mm, and height of 1 mm, allow compact and lightweight electronic assemblies.

This product is manufactured in China and supplied as a new unit, ensuring quality and compliance for electronics manufacturing and repair applications. This diode has a compact 6-pin SC-88 surface mount package for efficient PCB integration.

It features a maximum power dissipation of 200 mW rated for reliable operation. With a fast peak reverse recovery time of 4 ns, it is suitable for high-speed switching applications. The maximum forward voltage is 1.25 V under rated current to minimize losses.

Operating temperature ranges from -65°C to 150°C to withstand harsh industrial environments. Peak non-repetitive forward surge current is 2 A, ensuring transient robustness. Small physical dimensions of 2.2 mm length, 1.35 mm width, and 1 mm height support compact device design.

Manufactured in China, the diode is supplied as new and ready for surface mounting. Explore more semiconductor and diode components in the Electronics & Electricals category at EnvMart for your industrial, laboratory, and manufacturing needs.

Explore more products in our Switching Diodes category.

DiodesZetex Silicon Junction Switching Diode 300 mA 6-Pin SC-88 75 V BAV756DW-7-F
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Frequently Asked Questions

The maximum forward current for this diode is 300 mA.

The peak reverse voltage rating is 75 V.

It has a maximum power dissipation of 200 mW.

This diode is packaged in a 6-pin SC-88 surface mount package.

The operating temperature range is from -65°C to 150°C.

The peak reverse recovery time is 4 ns.

The dimensions are 2.2 mm in length, 1.35 mm in width, and 1 mm in height.

The maximum forward voltage drop is 1.25 V under rated current.

The peak non-repetitive forward surge current is rated at 2 A.

This model is designed for surface mounting.

It is manufactured in China.

This diode is suitable for low power switching and signal processing applications in industrial, automotive, and consumer electronics sectors.

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