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| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 2.2mm |
| Model | MMBD4148TW-7-F |
| Width | 1.35mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-88 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 6 |
| Maximum Power Dissipation Pd | 200mW |
| Diode Configuration | Isolated |
| Peak Non-Repetitive Forward Surge Current Ifsm | 2A |
| Maximum Forward Voltage Vf | 1.25V |
| Peak Reverse Recovery Time trr | 4ns |
| Maximum Forward Current If | 300mA |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 75V |
DiodesZetex MMBD4148TW-7-F Silicon Junction Switching Diode is a precise and reliable fast switching diode array designed for high-performance electronic applications. The device encompasses five diode elements with a common cathode, housed in a compact 6-pin SC-88 surface mount package measuring 2.2 mm in length, 1.35 mm in width, and 1 mm in height, making it ideal for densely packed circuit boards.
This switching diode supports a maximum forward current of 300 mA while withstanding a peak reverse voltage of up to 75 V. Its low forward voltage drop of 1.25 V and rapid peak reverse recovery time of just 4 nanoseconds make it perfectly suited for efficient signal processing in automotive electronics, industrial control circuits, communication devices, and consumer electronics.
The device operates reliably within a broad temperature range from -65°C to 150°C, accommodating demanding industrial and automotive environments. With a maximum power dissipation of 200 mW, it ensures stable operation without overheating. The silicon junction technology provides high switching speeds and excellent isolation between diode elements.
Manufactured in China, the MMBD4148TW-7-F is a new product meeting stringent quality standards and designed to enhance production efficiency when mounted on PCBs using automated machinery.
Supports high forward current for versatile applications. Compact surface mount design enables space-saving circuit layout. Fast recovery time improves switching performance. Wide temperature tolerance ensures durability in harsh environments.
Low forward voltage drop increases energy efficiency. Isolated diode configuration with common cathode enhances circuit flexibility. Ideal for automotive, industrial, and communication systems. Designed for integration in modern electronic assemblies.
Explore our extensive catalog for more high-quality discrete semiconductor devices and Switching Diodes suitable for various industrial and commercial applications on EnvMart.
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