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DiodesZetex Silicon Junction Single Switching Diode 215 mA 130 V SOD-123 BAV116W-7-F

Category Switching Diodes Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.35mm
Length 2.85mm
Model BAV116W-7-F
Width 1.7mm
Mount Type Surface
Series BAV116W
Maximum Operating Temperature 150°C
Package Type SOD-123
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Power Dissipation Pd 250mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 4A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 3μs
Maximum Forward Current If 215mA
Maximum Peak Reverse Repetitive Voltage Vrrm 130V
onsemi 60V 2A, Schottky Diode, 2-Pin SOD-123FL NTS260SFGBrand onsemi

Key Features

  • This diode features a peak reverse recovery time of 3 microseconds.
  • It supports a maximum power dissipation of 250 mW.
  • The package dimensions are 2.85 mm length, 1.7 mm width, and 1.35 mm height.
  • Designed for surface mounting and utilizes a 2-pin configuration.
  • Operating temperature ranges from -65°C up to 150°C.
  • Its maximum forward voltage is 1.25 V, ensuring low conduction loss.
  • The diode withstands a peak non-repetitive forward surge current of 4 A.

Product Description

DiodesZetex BAV116W-7-F Silicon Junction Single Switching Diode is engineered for precision switching applications in electronic circuits. It is designed as a silicon junction component with a single diode configuration and is surface-mounted using a compact and industry-standard SOD-123 package.

This diode supports a continuous maximum forward current of 215 mA, with a peak repetitive reverse voltage rating of 130 V, making it suitable for medium voltage electronic devices. The maximum power dissipation of up to 250 mW ensures durability under typical load conditions.

Operating temperatures range broadly from -65°C to 150°C, allowing reliable performance in harsh environmental conditions. The device exhibits a maximum forward voltage drop of 1.25 V, minimizing energy losses during operation.

The diode features a peak reverse recovery time of 3 microseconds, beneficial for high switching frequency circuits requiring fast response times. Its peak non-repetitive forward surge current capability of 4 A accommodates transient load spikes without damage.

The physical dimensions of the diode package are compact, measuring 2.85 mm in length, 1.7 mm in width, and a height of 1.35 mm. The 2-pin layout facilitates straightforward PCB mounting and integration into electronic modules.

Applications for this diode include signal switching, general-purpose rectification, and protection circuits in industrial, automotive (non-automotive grade), consumer electronics, and telecommunications sectors.

Set includes a single DiodesZetex BAV116W-7-F diode. Explore the extensive range of semiconductor components and Switching Diodes offered by EnvMart for industrial and commercial electronics assemblies and repairs. This diode features a peak reverse recovery time of 3 microseconds.

It supports a maximum power dissipation of 250 mW. The package dimensions are 2.85 mm length, 1.7 mm width, and 1.35 mm height. Designed for surface mounting and utilizes a 2-pin configuration. Operating temperature ranges from -65°C up to 150°C.

Its maximum forward voltage is 1.25 V, ensuring low conduction loss. The diode withstands a peak non-repetitive forward surge current of 4 A. Browse EnvMart’s catalog for more high-quality silicon junction diodes for your electronic design or maintenance needs.

DiodesZetex Silicon Junction Single Switching Diode 215 mA 130 V SOD-123 BAV116W-7-F
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Frequently Asked Questions

The maximum forward current of this diode is 215 mA.

It features a peak reverse recovery time of 3 microseconds.

The diode supports a maximum power dissipation of 250 mW.

The operating temperature ranges from -65°C to 150°C.

The package dimensions are 2.85 mm in length, 1.7 mm in width, and 1.35 mm in height.

It has a peak reverse repetitive voltage rating of 130 V.

This model has a single diode configuration.

It is designed for surface mounting.

The maximum forward voltage drop is 1.25 V.

It can withstand a peak non-repetitive forward surge current of 4 A.

This diode is suitable for signal switching, general-purpose rectification, and protection circuits in various sectors including industrial and telecommunications.

The diode has a pin count of 2.

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