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DiodesZetex Silicon Junction Single Switching Diode 215 mA 130 V SOD-123 BAV116W-7-F

Category Switching Diodes Brand DiodesZetex Condition New

Specifications

Country of Origin China
Brand DiodesZetex
Height 1.35mm
Length 2.85mm
Model BAV116W-7-F
Width 1.7mm
Mount Type Surface
Series BAV116W
Maximum Operating Temperature 150°C
Package Type SOD-123
Sub Type Silicon Junction
Minimum Operating Temperature -65°C
Pin Count 2
Maximum Power Dissipation Pd 250mW
Diode Configuration Single
Peak Non-Repetitive Forward Surge Current Ifsm 4A
Maximum Forward Voltage Vf 1.25V
Peak Reverse Recovery Time trr 3μs
Maximum Forward Current If 215mA
Maximum Peak Reverse Repetitive Voltage Vrrm 130V

Key Features

  • The diode features a 2-pin SOD-123 surface mount package for compact PCB applications.
  • Maximum power dissipation stands at 250 mW, suitable for low power switching.
  • Supports a peak non-repetitive forward surge current of 4 A for transient conditions.
  • Fast recovery time of 3 microseconds ensures efficient switching performance.
  • Operates reliably over a temperature range from -65°C to 150°C.
  • Maximum forward voltage is rated at 1.25 V, minimizing power losses.
  • Designed for surface mount technology (SMT) assembly on printed circuit boards.
  • Manufactured in China with new product condition assurance.

Product Description

DiodesZetex BAV116W-7-F is a silicon junction single switching diode designed for electronic components applications requiring efficient low current switching up to 215 mA.

This diode is housed in a compact 2-pin SOD-123 surface mount package, making it suitable for high-density PCB layouts in industrial, consumer electronics, and power management systems.

With a maximum reverse voltage of 130 V and low forward voltage drop of 1.25 V, it ensures minimal conduction losses during operation.

The device supports a maximum power dissipation of 250 mW and a peak non-repetitive forward surge current of 4 A, providing durability during transient overloads. Its fast peak reverse recovery time of 3 microseconds allows rapid switching, improving system efficiency.

Operating reliably over a broad temperature range from -65°C to 150°C, this diode is ideal for demanding environments, including industrial automation, instrumentation, and general-purpose electronics.

The diode features a 2-pin SOD-123 surface mount package for space-saving PCB design. Maximum forward current is 215 mA, suitable for low power switching applications. Maximum reverse voltage rating is 130 V for robust voltage blocking capability.

Fast 3 microsecond peak reverse recovery time enhances switching efficiency. Wide operating temperature range ensures versatility across industrial conditions. Compact size with length 2.85 mm, width 1.7 mm, and height 1.35 mm facilitates compact design.

Maximum power dissipation of 250 mW ensures safe operation under load. Peak surge current rating of 4 A tolerates transient conditions in circuits. Ideal for semiconductor and PCB assembly applications requiring reliable Switching Diodes in automotive, industrial control, and power supply sectors.

Browse the Electronics & Electricals Discrete Semiconductors category at EnvMart for more switching diode solutions tailored to your industrial needs.

DiodesZetex Silicon Junction Single Switching Diode 215 mA 130 V SOD-123 BAV116W-7-F
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Frequently Asked Questions

The maximum forward current for this diode is 215 mA, making it suitable for low power switching applications.

The maximum reverse voltage rating is 130 V, providing robust voltage blocking capability.

This diode is housed in a compact SOD-123 surface mount package, which is ideal for high-density PCB layouts.

The maximum power dissipation for the BAV116W-7-F is 250 mW, ensuring safe operation under load conditions.

The diode supports a peak non-repetitive forward surge current of 4 A, allowing it to handle transient conditions effectively.

It operates reliably over a temperature range from -65°C to 150°C, making it suitable for demanding environments.

The maximum forward voltage drop is rated at 1.25 V, which helps minimize power losses during operation.

The peak reverse recovery time is 3 microseconds, enhancing the switching efficiency of the device.

The dimensions are 2.85 mm in length, 1.7 mm in width, and 1.35 mm in height, allowing for compact design.

This diode has a 2-pin configuration, making it suitable for surface mount technology assembly.

It is a silicon junction single switching diode, designed for efficient low current switching applications.

The diode is manufactured in China, ensuring new product condition assurance.

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