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DiodesZetex Silicon Junction Isolated Switching Diode 300mA 75V 6-Pin SC-88 BAS16TW-7-F
Specifications
| Country of Origin | China |
|---|---|
| Brand | DiodesZetex |
| Height | 1mm |
| Length | 2.2mm |
| Model | BAS16TW-7-F |
| Width | 1.35mm |
| Mount Type | Surface |
| Series | MMBD4148TW/BAS16TW |
| Maximum Operating Temperature | 150°C |
| Package Type | SC-88 |
| Sub Type | Silicon Junction |
| Minimum Operating Temperature | -65°C |
| Pin Count | 6 |
| Maximum Power Dissipation Pd | 200mW |
| Diode Configuration | Isolated |
| Peak Non-Repetitive Forward Surge Current Ifsm | 2A |
| Maximum Forward Voltage Vf | 1.25V |
| Peak Reverse Recovery Time trr | 4ns |
| Maximum Forward Current If | 300mA |
| Maximum Peak Reverse Repetitive Voltage Vrrm | 75V |
Key Features
- Maximum forward current rating of 300 milliamperes.
- Peak repetitive reverse voltage of 75 volts ensures reliable switching.
- Compact SC-88 surface mount package with six pins.
- Peak reverse recovery time is a fast 4 nanoseconds.
- Maximum power dissipation rated at 200 milliwatts.
- Wide operating temperature range from -65°C to 150°C.
- Forward voltage maximum of 1.25 volts for efficient operation.
- Designed for surface mounting in electronic circuits.
Product Description
DiodesZetex BAS16TW-7-F is a silicon junction switching diode designed for surface mount technology applications, offering isolated diode configuration and reliable performance for electronic circuits requiring a maximum forward current of 300mA and peak voltage handling up to 75V.
This diode is housed in a compact SC-88 package featuring six pins, making it suitable for densely packed PCB layouts. The device exhibits a fast peak reverse recovery time of just 4 nanoseconds, supporting high switching speeds typically required in discrete semiconductor applications.
Operating temperature ranges from -65°C to 150°C, allowing robust operation under varied environmental conditions. The maximum forward voltage of 1.25V and power dissipation up to 200mW make it well-suited for low power switching and general purpose electronic applications in industrial, commercial electronics manufacturing, and prototyping.
With dimensions measuring 2.2mm in length, 1.35mm in width, and 1mm in height, this component supports modern miniaturized electronic designs. It complies with general semiconductor standards but does not hold automotive specific certifications.
Maximum forward current rating of 300 milliamperes. Peak repetitive reverse voltage of 75 volts for dependable switching. Surface mount design with 6-pin SC-88 package. Fast peak reverse recovery time of 4 nanoseconds. Maximum power dissipation of 200 milliwatts.
Operating temperature range from -65°C to 150°C. Forward voltage maximum of 1.25 volts. Compact dimensions support space-efficient PCB layouts. Versatile for use in industrial electronics, consumer devices, and laboratory equipment.
DiodesZetex components are known for their reliability in discrete semiconductor and switching diode applications. This model is ideal for engineers and technicians requiring quality silicon junction diodes for switching and general electronic use. EnvMart offers a broad selection of such components to support diverse engineering needs.
Explore more products in our Switching Diodes category.
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Frequently Asked Questions
The maximum forward current rating of this model is 300 milliamperes.
This diode has a peak repetitive reverse voltage of 75 volts.
The dimensions of this model are 2.2mm in length, 1.35mm in width, and 1mm in height.
The maximum power dissipation for the BAS16TW-7-F is rated at 200 milliwatts.
The peak reverse recovery time for this model is 4 nanoseconds.
This diode operates within a temperature range of -65°C to 150°C.
The diode is housed in a compact SC-88 surface mount package.
This model features a total of six pins.
The maximum forward voltage for the BAS16TW-7-F is 1.25 volts.
This model uses an isolated diode configuration.
It is suitable for low power switching and general purpose electronic applications in industrial and commercial electronics.
The country of origin for this diode is China.
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