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Vishay Schottky Rectifier 120 V 60 A 3-Pin TO-220F VF60120C-M3/4W
Specifications
| Country of Origin | China |
|---|---|
| Diameter | 10.26mm |
| Brand | Vishay |
| Height | 15.24mm |
| Length | 10.26mm |
| Model | VF60120C-M3/4W |
| Width | 4.83mm |
| Mount Type | Through Hole |
| Series | VFX |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220F |
| Minimum Operating Temperature | -40°C |
| Standards/Approvals | UL 94 V-0, WEEE 2002/96/EC, IEC 61249-2-21, JESD 201 Class 1A, JESD 22-B102, JESD 22-B106, J-STD-002, RoHS 2002/95/EC |
| Pin Count | 3 |
| Maximum Continuous Forward Current If | 60A |
| Peak Reverse Repetitive Voltage Vrrm | 120V |
| Diode Configuration | Common Cathode |
| Rectifier Type | Schottky |
| Peak Reverse Current Ir | 45mA |
| Peak Non-Repetitive Forward Surge Current Ifsm | 300A |
| Maximum Forward Voltage Vf | 950mV |
| Taiwan Semi 60V 60A, Dual Schottky Diode, 3-Pin TO-3P MBR6060PT C0Brand | Taiwan Semiconductor |
Key Features
- The device supports a maximum continuous forward current of 60 A.
- Operates with a peak reverse repetitive voltage of 120 V.
- Featuring a low maximum forward voltage of 950 mV for reduced power loss.
- Constructed in a durable TO-220F package with through hole mount.
- Rated for operation from -40°C to 150°C for wide temperature ranges.
- Pin count of 3 with common cathode diode configuration.
- Offers a peak non-repetitive forward surge current of 300 A to handle transient conditions.
- Compliant with RoHS and multiple industry standards ensuring quality and safety.
Product Description
Vishay VF60120C-M3/4W is a high-performance Schottky rectifier housed in a 3-pin TO-220F package suitable for a wide range of industrial and commercial power electronics applications.
This component supports a maximum continuous forward current of 60 A and withstands a peak reverse repetitive voltage of 120 V, making it ideal for efficient AC/DC power conversion systems.
The rectifier features a low maximum forward voltage drop of 950 mV, contributing to enhanced energy efficiency and reduced thermal dissipation in DC/DC converters and switched mode power supplies.
Its operating temperature range extends from -40° C to 150° C, ensuring reliable performance under harsh environmental conditions common in industrial and automotive electronics.
The patented Trench MOS Barrier Schottky (TMBS) technology minimizes stored charges and diminishes minority carrier injection, resulting in faster switching speeds and higher efficiency compared to planar Schottky rectifiers.
Compliant with prevalent standards including UL 94 V-0, RoHS 2002/95/EC, JESD 201 Class 1A, and others, this device ensures safety and environmental responsibility. Typical applications include power supplies, DC/DC converters, battery chargers, and general industrial power regulation devices.
The device supports a maximum continuous forward current of 60 A. Peak reverse repetitive voltage rating of 120 V. Low maximum forward voltage of 950 mV for efficiency. Operating temperature range from -40°C to 150°C. Patented TMBS technology for improved switching performance.
Complies with multiple safety and environmental standards. Constructed in TO-220F package suitable for through-hole mounting. Pin count of 3 with common cathode configuration. Capable of handling peak non-repetitive forward surge current of 300 A.
Explore Vishay components and related semiconductor products on EnvMart for industrial, automotive, and commercial electronics needs.
Explore more products in our Schottky Diodes & Rectifiers category.
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Frequently Asked Questions
The maximum continuous forward current rating is 60 A.
The maximum forward voltage drop is 950 mV.
The operating temperature range extends from -40°C to 150°C.
It is constructed in a TO-220F package suitable for through-hole mounting.
This model has a pin count of 3 with a common cathode diode configuration.
It can handle a peak non-repetitive forward surge current of 300 A.
It complies with UL 94 V-0, RoHS 2002/95/EC, and other industry standards.
The height is 15.24 mm and the width is 4.83 mm.
It features patented Trench MOS Barrier Schottky (TMBS) technology for enhanced efficiency and faster switching speeds.
The diameter and length are both 10.26 mm.
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