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Taiwan Semiconductor Silicon Junction Switching Diode, Single, 1 A, 2-Pin Surface Mount, 200 V Sub SMA ES1DL R2

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Taiwan Semiconductor Silicon Junction Switching Diode, Single, 1 A, 2-Pin Surface Mount, 200 V Sub SMA ES1DL R2

Name: Taiwan Semiconductor Silicon Junction Switching Diode, Single, 1 A, 2-Pin Surface Mount, 200 V Sub SMA ES1DL R2
Brand: Taiwan Semiconductor
SKU: 363201
Price: 0.17 USD
Availability: InStock

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Category Semiconductors Brand Taiwan Semiconductor Condition New

Specifications

Country of Origin	India
Brand	Taiwan Semiconductor
Height	1.43mm
Length	2.9mm
Model	ES1DL R2
Width	1.9mm
Mount Type	Surface
Maximum Operating Temperature	150°C
Package Type	Sub SMA
Sub Type	Silicon Junction
Minimum Operating Temperature	-55°C
Pin Count	2
Diode Configuration	Single
Peak Non-Repetitive Forward Surge Current Ifsm	30A
Maximum Forward Voltage Vf	950mV
Peak Reverse Recovery Time trr	35ns
Maximum Forward Current If	1A
Maximum Peak Reverse Repetitive Voltage Vrrm	200V

Key Features

This diode supports a maximum forward current of 1 ampere.
It features a peak reverse repetitive voltage rating of 200 volts suitable for various electronic circuits.
The device comes in a compact Sub SMA package with a 2-pin configuration.
Maximum forward voltage is 950 millivolts, ensuring efficient conduction.
Operates reliably within a temperature range from -55°C to 150°C, suitable for harsh environments.
Peak non-repetitive forward surge current is rated up to 30 amperes.
Its fast peak reverse recovery time of 35 nanoseconds supports high-frequency switching.
Compact dimensions of approximately 2.9 mm length, 1.9 mm width, and 1.43 mm height facilitate PCB design.

Product Description

Taiwan Semiconductor ES1DL R2 is a high-quality silicon junction switching diode designed for use in power and electronic circuits requiring efficient rectification and high-speed switching. It is rated for a maximum forward current of 1 ampere and housed in a Sub SMA surface mount package with two pins for easy PCB integration.

This diode offers a peak reverse repetitive voltage of 200 volts, making it suitable for applications where voltage blocking capability is essential. Its maximum forward voltage of 950 millivolts helps minimize power losses during operation.

Designed for use in a wide temperature range, from -55°C to 150°C, the ES1DL R2 ensures reliability in industrial, automotive, and consumer electronics environments. The device also supports a peak non-repetitive forward surge current of up to 30 amperes to withstand occasional current spikes.

Featuring a peak reverse recovery time of 35 nanoseconds, this diode enables high-frequency switching applications in power supplies, inverters, and motor drives. Its compact size with approximate dimensions of 2.9 mm length, 1.9 mm width, and 1.43 mm height enables space-saving on printed circuit boards.

Maximum forward current: 1 A. Peak reverse repetitive voltage: 200 V. Maximum forward voltage: 950 mV. Operating temperature range: -55°C to 150°C. Peak non-repetitive forward surge current: 30 A. Peak reverse recovery time: 35 ns.

Surface mount Sub SMA package with 2 pins.

This diode is ideal for industrial electronics, power management systems, HVAC controls, and other applications requiring reliable diode performance. For related components, browse the Semiconductor Switching Diode category at EnvMart.

Explore more products in our Semiconductors category.