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| Country of Origin | India |
|---|---|
| Brand | Taiwan Semiconductor |
| Height | 1.2mm |
| Length | 3.1mm |
| Model | TSM2307CX RFG |
| Width | 1.7mm |
| Mount Type | Surface |
| Maximum Operating Temperature | 150°C |
| Package Type | SOT-23 |
| Minimum Operating Temperature | -55°C |
| Pin Count | 3 |
| Channel Type | Type P |
| Maximum Continuous Drain Current Id | 3A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 140mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 1.25W |
| Typical Gate Charge Qg @ Vgs | 10nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | -1.2V |
Taiwan Semiconductor TSM2307CX RFG is a type P-channel power MOSFET featuring enhancement mode operation with a maximum continuous drain current of 3 A and maximum drain-source voltage of 30 V. Packaged in a compact 3-pin SOT-23 surface mount package, it is designed for efficient power switching in modern electronic circuits.
The device offers low drain-source resistance of 140 milliohms that ensures low conduction losses and improved efficiency in switching power applications. Its typical gate charge of 10 nC enables fast switching, reducing switching losses.
Operating temperature range from -55°C to 150°C allows reliable use in harsh automotive, industrial, and commercial environments. The MOSFET withstands a gate-source voltage of ±20 V, providing robust gate drive margins for diverse applications.
With a compact footprint measuring approximately 3.1 mm by 1.7 mm and a height of 1.2 mm, the device is suitable for high-density, space-constrained PCB layouts. This P-channel enhancement MOSFET supports continuous drain current of 3 A.
Maximum drain-source voltage rating at 30 V for safe operation. Low on-resistance Rds(on) of 140 milliohms enhances power efficiency. Compact SOT-23 3-pin surface mount package for modern electronics. Typical gate charge of 10 nC facilitates efficient switching.
Wide operating temperature range from -55°C to 150°C for diverse conditions. Maximum power dissipation of 1.25 watts under recommended use. Rated gate-source voltage of ±20 V ensures device protection. Small size with length 3.1 mm, width 1.7 mm, and height 1.2 mm.
Forward voltage of -1.2 V indicating efficient conduction.
This power MOSFET is ideal for industrial, automotive electronics, power management, and consumer electronic applications requiring reliable switching performance in a small package. Its surface mount configuration suits automated assembly processes.
Explore more electronic components and MOSFETs in the Discrete Semiconductors category on EnvMart for efficient power management and control solutions.
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