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onsemi PowerTrench N-Channel MOSFET, 58 A, 30 V, Enhancement Mode, Surface Mount, 3-Pin TO-252 FDD8880
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 2.39mm |
| Length | 6.73mm |
| Model | FDD8880 |
| Width | 6.22mm |
| Mount Type | Surface |
| Series | PowerTrench |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-252 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 739-0151 Brand: [onsemi](https://in.rsdelivers.com/brands/onsemi)Manufacturers Part No.: FDD8880 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 58A |
| Maximum Drain Source Voltage Vds | 30V |
| Maximum Drain Source Resistance Rds | 15mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 55W |
| Typical Gate Charge Qg @ Vgs | 23nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
Key Features
- This device uses enhancement mode N-channel architecture for efficient switching.
- Maximum power dissipation is 55 W, suitable for high-power applications.
- Typical gate charge at Vgs is 23 nC, enabling fast switching speeds.
- The package type is TO-252 with surface mount technology and 3 pins.
- Designed to operate within a temperature range from -55°C to 175°C.
- Low maximum drain-source resistance of 15 milliohms ensures minimal conduction losses.
- Maximum gate-source voltage of -20 V to +20 V safeguards device operation.
- PowerTrench series offers reliable performance for industrial and electronic component use.
Product Description
onsemi FDD8880 is a PowerTrench N-Channel MOSFET designed for high-performance switching applications. It delivers a maximum continuous drain current of 58 A and a drain-source voltage of 30 V, operating within a broad temperature range from -55°C minimum to 175°C maximum. The device utilizes enhancement mode channel technology for efficient operation and low conduction losses.
Encapsulated in a TO-252 package, this MOSFET features surface mount compatibility and a 3-pin configuration, measuring 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height. Its typical gate charge at Vgs is 23 nC, allowing fast switching in power management and electronic control systems. The maximum drain-source resistance is 15 milliohms, ensuring energy-efficient conduction.
The device's maximum gate-source voltage rating is -20 V to +20 V, making it robust for various industrial, electronic component, and power supply applications. It complies with no specific standards or automotive certifications but is part of the trusted PowerTrench MOSFET series from onsemi, widely used in industrial electronics, power conversion, and motor drive systems.
This MOSFET provides high continuous drain current of 58 A for demanding load conditions. The surface mount TO-252 package supports compact, automated assembly processes. Its wide operating temperature range suits harsh environments in industrial applications.
Low Rds(on) resistance contributes to efficient power management and reduced heat generation. The device characteristics support applications such as power supplies, motor controls, and switching regulators. Its gate charge and voltage ratings enable fast, reliable switching behavior.
Compact size and pin count facilitate integration into densely packed circuit boards. Explore onsemi MOSFETs and related discrete semiconductor components for enhanced performance and reliability in your electronic designs at EnvMart.
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Frequently Asked Questions
The maximum continuous drain current for this model is 58 A.
The maximum drain-source voltage is 30 V.
The typical gate charge at Vgs is 23 nC.
This model is packaged in a TO-252 type with a 3-pin configuration.
The maximum power dissipation is 55 W.
It operates within a temperature range from -55°C to 175°C.
The maximum drain-source resistance is 15 milliohms.
This MOSFET uses enhancement mode N-channel architecture.
The dimensions are 6.73 mm in length, 6.22 mm in width, and 2.39 mm in height.
The maximum gate-source voltage rating is -20 V to +20 V.
The FDD8880 is manufactured in India.
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