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onsemi Darlington Transistor NPN, 8 A, 100 V, TO-220 Package, 3-Pin, HFE 100, 75W Power Dissipation 2N6045G
Specifications
| Country of Origin | India |
|---|---|
| Brand | onsemi |
| Height | 4.82mm |
| Length | 15.75mm |
| Model | 2N6045G |
| Mount Type | Through Hole |
| Series | 2N6045 |
| Maximum Operating Temperature | 150°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -65°C |
| Pin Count | 3 |
| Maximum Continuous Collector Current Ic | 8A |
| Maximum Collector Emitter Voltage Vceo | 100V |
| Number of Elements per Chip | 1 |
| Minimum DC Current Gain hFE | 100 |
| Transistor Polarity | NPN |
| Maximum Emitter Base Voltage VEBO | 5V |
| Maximum Collector Emitter Saturation Voltage VceSAT | 2V |
| Maximum Collector Base Voltage VCBO | 100V |
| Maximum Collector Cut-off Current | 20μA |
| Maximum Power Dissipation Pd | 75W |
| onsemi 1 Darlington Transistor NPN, 8 A 100 V HFE | 100, 3-Pin TO-220 |
Key Features
- Maximum continuous collector current of 8 amperes.
- Maximum collector emitter voltage rated at 100 volts for reliability.
- High DC current gain with a minimum hFE of 100.
- Package type TO-220 suitable for through-hole mounting.
- Maximum power dissipation of 75 watts for medium power applications.
- Designed as a Darlington pair transistor ideal for amplifier and low-speed switching.
- Operating temperature range from -65°C to 150°C ensuring wide functionality.
- Maximum collector base voltage of 100 volts and maximum emitter base voltage of 5 volts.
Product Description
onsemi 2N6045G Darlington Transistor NPN is a plastic medium power complementary silicon transistor designed for general-purpose amplifier and low-speed switching applications. It features a TO-220 package with 3 pins, suitable for through-hole mounting.
The transistor supports a maximum continuous collector current of 8A and a collector emitter voltage of 100V, making it suitable for various electronic circuits requiring medium power handling capacity. It offers a high minimum DC current gain (hFE) of 100, enhancing amplification performance.
Equipped with monolithic construction and built-in base emitter shunt resistors, the 2N6045G transistor ensures stable operation. Its maximum power dissipation rating is 75 watts, enabling reliable performance in demanding scenarios.
The device operates efficiently within a temperature range of -65°C to 150°C, accommodating diverse industrial and commercial environments. Key voltage ratings include a maximum collector base voltage of 100V, emitter base voltage of 5V, and collector emitter saturation voltage of 2V.
Compact dimensions of 15.75 mm length and 4.82 mm height allow easy integration into electronic assemblies. The transistor is Pb free and RoHS compliant, meeting modern environmental and regulatory standards.
Maximum continuous collector current: 8A. Collector emitter voltage: 100V. Minimum DC current gain: 100 (hFE). Through-hole mount with TO-220 package. Power dissipation: 75W. Operating temperature: -65°C to 150°C. Built-in base emitter shunt resistors.
3-pin configuration. Compact dimensions: 15.75 mm length, 4.82 mm height. Pb free and RoHS compliant.
This transistor is well suited for electronic industrial, manufacturing, and commercial use, especially in power amplification and switching applications requiring a robust and efficient NPN Darlington transistor.
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Frequently Asked Questions
The maximum continuous collector current for this model is 8 amperes.
The maximum collector emitter voltage rated for this transistor is 100 volts.
This transistor comes in a TO-220 package type, suitable for through-hole mounting.
The minimum DC current gain (hFE) for the 2N6045G is 100.
The maximum power dissipation for this model is 75 watts.
The operating temperature range for the 2N6045G is from -65°C to 150°C.
The dimensions of this model are 15.75 mm in length and 4.82 mm in height.
The maximum emitter base voltage (VEBO) for this transistor is 5 volts.
The maximum collector base voltage (VCBO) for this model is 100 volts.
The 2N6045G is an NPN Darlington transistor, designed for general-purpose amplifier and low-speed switching applications.
This transistor has a 3-pin configuration.
Yes, the 2N6045G is Pb free and RoHS compliant, meeting modern environmental and regulatory standards.
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