Vishay P-Channel MOSFET 3-Pin SOT-23, -530 mA, -150 V Enhancement, 750 mW Power Dissipation SI2325DS-T1-E3

Vishay SI2325DS-T1-E3 is a P-Channel MOSFET featuring a 3-pin SOT-23 surface-mount package, designed for compact high-voltage switching applications in electronic power management. It supports a maximum continuous drain current of -530 mA and withstands drain-source voltages up to -150 V with enhancement mode operation for precise control.

The device offers a maximum power dissipation of 750 mW, enabling robust thermal handling when proper PCB layout with copper areas or thermal vias is implemented. Its low drain-source resistance of 1.2Ω ensures minimal conduction losses for efficient operation.

With a typical gate charge of 7.7 nC, the MOSFET facilitates faster gate transitions needed in switching environments. The operating temperature range from -55°C to 150°C makes it suitable for a wide scope of industrial, laboratory, and commercial electronics, excluding automotive applications, as it is not automotive graded.

Applications include high-voltage load switching in power rails, level-shift circuits requiring P-channel devices, battery protection circuits, reverse polarity protection, and compact power management boards with surface-mount designs requiring efficient control at low power.

The maximum gate-to-source voltage ratings are ±20 volts to ensure the device gate is not overstressed, enhancing reliability. The device is compliant with RoHS standards, supporting environmentally responsible manufacturing.

The compact SOT-23 package dimensions are approximately 3.04 mm length, 1.4 mm width, and 1.02 mm height, facilitating space saving on printed circuit boards.

Overall, Vishay SI2325DS-T1-E3 provides an efficient, high-voltage P-Channel MOSFET solution for electronic designs requiring low power and precise switching control in a surface-mount footprint.

Operates in enhancement mode ensuring controlled source-to-drain conduction. Packaged in a compact SOT-23 surface-mount housing to save PCB space. Maximum power dissipation is 750 mW enabling efficient thermal management.

Low on-resistance of 1.2Ω reduces power losses and improves conduction efficiency. Wide temperature range from -55°C to 150°C for versatile environmental use. Small typical gate charge of 7.7 nC allows for faster switching speeds.

Forward voltage drop is -1.2 V ensuring low voltage loss in operation. Maximum gate-to-source voltage rating of ±20 V prevents gate overstress. Suitable for load switching, level-shift circuits, battery protection, and reverse polarity applications.

RoHS-compliant ensuring environmentally friendly manufacturing standards. Explore more MOSFET and semiconductor solutions on EnvMart to support your industrial and electronic component needs.