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Vishay N-Channel MOSFET, 85 A, 100 V Enhancement, 3-Pin TO-220 SUP85N10-10-GE3
Specifications
| Country of Origin | India |
|---|---|
| Brand | Vishay |
| Height | 9.01mm |
| Length | 10.41mm |
| Model | SUP85N10-10-GE3 |
| Width | 4.7mm |
| Mount Type | Through Hole |
| Series | SUP85N10-10P |
| Maximum Operating Temperature | 175°C |
| Package Type | TO-220 |
| Minimum Operating Temperature | -55°C |
| Pay online using | Or choose to pay later via bank transfer |
| RS Stock No. | 708-5178Brand: VishayManufacturers Part No.: SUP85N10-10-GE3 |
| Pin Count | 3 |
| Channel Type | N |
| Maximum Continuous Drain Current Id | 85A |
| Maximum Drain Source Voltage Vds | 100V |
| Maximum Drain Source Resistance Rds | 10.5mΩ |
| Channel Mode | Enhancement |
| Maximum Power Dissipation Pd | 250W |
| Typical Gate Charge Qg @ Vgs | 105nC |
| Maximum Gate Source Voltage Vgs | -20, +20V |
| Forward Voltage Vf | 1V |
Key Features
- Features a maximum continuous drain current of 85 A for high current applications.
- Rated for a maximum drain-source voltage of 100 V ensuring robust operation.
- Built with enhancement mode channel type and through-hole mount for easy PCB integration.
- Maintains a low maximum drain-source resistance of 10.5 milliohms for efficient conduction.
- Supports a maximum power dissipation of 250 watts allowing high power applications.
- Operates reliably across a temperature range of -55°C to +175°C.
- Equipped with a typical gate charge of 105 nanocoulombs for fast switching.
- Designed with a maximum gate-source voltage tolerance of -20 V to +20 V.
Product Description
Vishay SUP85N10-10-GE3 is an N-Channel MOSFET designed for discrete semiconductor applications in electronics and power management. It supports a maximum continuous drain current of 85 A and a maximum drain-source voltage rating of 100 V, packaged in a robust 3-pin TO-220 form factor suitable for through-hole mounting.
This enhancement mode MOSFET offers low conduction losses with a maximum drain-source resistance of only 10.5 milliohms, making it suitable for efficient switching circuits and power electronics. The device can dissipate up to 250 W, enabling use in high power environments.
Thermal endurance is excellent, with operation from -55°C minimum up to a maximum of 175°C. Its typical gate charge is 105 nanocoulombs, which facilitates rapid switching with minimal delay. The maximum gate-source voltage rating of -20 V to +20 V ensures robust gate control.
Dimensionally compact at 10.41 mm length, 9.01 mm height, and 4.7 mm width, this MOSFET is widely used in industrial, commercial, and laboratory electronics where reliable switching and power control are essential.
Maximum continuous drain current: 85 A. Maximum drain-source voltage: 100 V. Low on-resistance of 10.5 milliohms. Power dissipation up to 250 W. Operating temperature range from -55°C to 175°C. Typical gate charge: 105 nC.
Gate-source voltage max: -20 V to +20 V. 3-pin TO-220 package, through-hole mount. Length: 10.41 mm, Height: 9.01 mm, Width: 4.7 mm.
This Vishay SUP85N10-10-GE3 MOSFET is an ideal choice for power electronics, industrial automation, and electronic design applications demanding high-efficiency and durability in switching devices.
Explore more Vishay semiconductor components and discrete MOSFETs on EnvMart for your industrial and engineering needs.
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Frequently Asked Questions
The Vishay SUP85N10-10-GE3 has a maximum continuous drain current of 85 A.
This model is rated for a maximum drain-source voltage of 100 V.
It supports a maximum power dissipation of 250 watts, making it suitable for high power applications.
The maximum drain-source resistance is 10.5 milliohms, allowing for efficient conduction.
It operates reliably across a temperature range of -55°C to 175°C.
The typical gate charge is 105 nanocoulombs, facilitating fast switching.
The maximum gate-source voltage tolerance is -20 V to +20 V.
It is designed for through-hole mounting in a 3-pin TO-220 package.
The dimensions are 10.41 mm in length, 9.01 mm in height, and 4.7 mm in width.
It is suitable for power electronics, industrial automation, and electronic design applications.
This model features an enhancement mode N-channel type.
The Vishay SUP85N10-10-GE3 is manufactured in India.
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